參數資料
型號: 2N7000KL-TR1
廠商: VISHAY SILICONIX
元件分類: 小信號晶體管
英文描述: 470 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝: TO-226AA, 3 PIN
文件頁數: 4/5頁
文件大?。?/td> 93K
代理商: 2N7000KL-TR1
www.vishay.com
4
Document Number: 72705
S-72202-Rev. B, 22-Oct-07
Vishay Siliconix
2N7000KL/BS170KL
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72705.
Threshold Voltage Variance Over Temperature
V
ariance
(
V
)
V
GS(th)
-0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50
- 25
0
25
50
75
100
125
150
ID = 250 A
TJ - Junction Temperature (°C)
Single Pulse Power, Junction-to-Ambient
0.01
0
1
16
20
100
600
0.1
Po
w
er
(
W
)
Time (s)
8
12
4
10
TA = 25 °C
Safe Operating Area
10
0.1
1
10
100
0.001
1
1 ms
-Drain
C
u
rrent
(A)
I
D
0.01
TA = 25 °C
Single Pulse
10 ms
100 ms
DC
IDM Limited
ID(on)
Limited
BVDSS Limited
10 s
1 s
Limited by rDS(on)*
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which rDS(on) is specified
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3
10-2
0
6
0
1
10-1
10-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
N
ormalized
Ef
fecti
v
e
T
ransient
Thermal
Impedance
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 350 °C/W
3. TJM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
相關PDF資料
PDF描述
2N7000TR3 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2N7000TR1 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2N7000TR2 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2N7000TA 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2N7000TR4 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
相關代理商/技術參數
參數描述
2N7000KL-TR1-E3 功能描述:MOSFET 60V (DS) .47A .8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7000KL-TR1-E3 制造商:Vishay Siliconix 功能描述:MOSFET
2N7000L-T92-B 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:N-CHANNEL ENHANCEMENT MODE
2N7000L-T92-K 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:N-CHANNEL ENHANCEMENT MODE
2N7000L-T92-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:N-CHANNEL ENHANCEMENT MODE