參數(shù)資料
型號(hào): 2N7000KL-TR1
廠商: VISHAY SILICONIX
元件分類: 小信號(hào)晶體管
英文描述: 470 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝: TO-226AA, 3 PIN
文件頁數(shù): 2/5頁
文件大?。?/td> 93K
代理商: 2N7000KL-TR1
www.vishay.com
2
Document Number: 72705
S-72202-Rev. B, 22-Oct-07
Vishay Siliconix
2N7000KL/BS170KL
Notes:
a. Pulse test: PW
≤ 300 s duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Limits
Unit
Min
Typ
Max
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 10 A
60
V
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 A
12.0
2.5
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 10 V
± 1
A
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
1
VDS = 60 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currentb
ID(on)
VGS = 10 V, VDS = 7.5 V
0.8
A
VGS = 4.5 V, VDS = 10 V
0.5
Drain-Source On-Resistanceb
rDS(on)
VGS = 10 V, ID = 0.5 A
1.1
2
Ω
VGS = 4.5 V, ID = 0.2 A
1.6
4
Forward Transconductanceb
gfs
VDS = 10 V, ID = 0.5 A
550
ms
Diode Forward Voltage
VSD
IS = 0.3 A, VGS = 0 V
0.87
1.3
V
Dynamicb
Total Gate Charge
Qg
VDS = 10 V, VGS = 4.5 V
ID 0.25 A
0.4
0.6
nC
Gate-Source Charge
Qgs
0.11
pF
Gate-Drain Charge
Qgd
0.15
Gate Resistance
Rg
173
Turn-On Time
td(on)
VDD = 30 V, RL = 150 Ω
ID 0.2 A, VGEN = 10 V, RG = 10 Ω
3.8
10
ns
tr
4.8
15
Turn-Off Time
td(off)
12.8
20
tf
9.6
15
Output Characteristics
0.0
0.2
0.4
0.6
0.8
1.0
012345
VDS - Drain-to-Source Voltage (V)
-Drain
C
u
rrent
(A)
I D
VGS = 10, 7 V
3 V
5 V
4 V
6 V
Transfer Characteristics
0123456
VGS - Gate-to-Source Voltage (V)
-Drain
C
u
rrent
(A)
I D
TJ = - 55 °C
125 °C
25 °C
1.2
0.9
0.6
0.3
0
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2N7000TR3 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
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