參數(shù)資料
型號(hào): 2N7000KL-TR1
廠商: VISHAY SILICONIX
元件分類(lèi): 小信號(hào)晶體管
英文描述: 470 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝: TO-226AA, 3 PIN
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 93K
代理商: 2N7000KL-TR1
Vishay Siliconix
2N7000KL/BS170KL
Document Number: 72705
S-72202-Rev. B, 22-Oct-07
www.vishay.com
1
N-Channel 60-V (D-S) MOSFET
FEATURES
TrenchFET Power MOSFET
ESD Protected: 2000 V
APPLICATIONS
Direct Logic-Level Interface: TTL/CMOS
Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc.
Battery Operated Systems
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)VGS(th) (V)
ID (A)
60
2 at VGS = 10 V
1.0 to 2.5
0.47
4 at VGS = 4.5 V
0.33
TO-226AA
(TO-92)
Top View
S
D
G
1
2
3
Ordering Information: 2N7000KL-TR1
2N7000KL-TR1-E3 (Lead (Pb)-free)
Device Marking
Front View
“S” 2N
7000KL
xxyy
“S” = Siliconix Logo
xxyy = Date Code
TO-92-18RM
(TO-18 Lead Form)
Top View
D
S
G
1
2
3
Ordering Information: BS170KL-TR1
BS170KL-TR1-E3 (Lead (Pb)-free)
Device Marking
Front View
“S” BS
170KL
xxyy
“S” = Siliconix Logo
xxyy = Date Code
D
S
G
100
Notes:
a. Pulse width limited by maximum junction temperature.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
b
TA = 25 °C
ID
0.47
A
TA = 70 °C
0.37
Pulsed Drain Currenta
IDM
1.0
Power Dissipation
TA = 25 °C
PD
0.8
W
TA = 70 °C
0.51
Maximum Junction-to-Ambient
RthJA
158
°C/W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Available
Pb-free
RoHS*
COMPLIANT
相關(guān)PDF資料
PDF描述
2N7000TR3 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2N7000TR1 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2N7000TR2 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2N7000TA 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
2N7000TR4 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N7000KL-TR1-E3 功能描述:MOSFET 60V (DS) .47A .8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2N7000KL-TR1-E3 制造商:Vishay Siliconix 功能描述:MOSFET
2N7000L-T92-B 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:N-CHANNEL ENHANCEMENT MODE
2N7000L-T92-K 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:N-CHANNEL ENHANCEMENT MODE
2N7000L-T92-R 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:N-CHANNEL ENHANCEMENT MODE