參數(shù)資料
型號(hào): 2N6798
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 5.5 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 85K
代理商: 2N6798
2001 Fairchild Semiconductor Corporation
2N6798 Rev. B
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TYPICAL TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. SOURCE TO DRAIN DIODE VOLTAGE
Typical Performance Curves Unless Otherwise Specied (Continued)
VDS, DRAIN TO SOURCE VOLTAGE (V)
1234
0
25
20
15
0
10
I D
,DRAIN
CURRENT
(A)
5
9V
7V
8V
5V
4V
VGS = 6V
10V
80
s PULSE TEST
20
10
0.1
0
246
10
2
5
I D
DRAIN
CURRENT
(A)
VGS, GATE TO SOURCE VOLTAGE (V)
80
s PULSE TEST
1.0
0.2
0.5
TJ = -55
oC
TJ = 125
oC
TJ = 25
oC
8
ID, DRAIN CURRENT (A)
10
20
30
040
0.6
0.4
0.2
2.0
s PULSE TEST
R
DS(ON),
DRAIN
T
O
SOURCE
0.8
VGS = 20V
VGS = 10V
0
ON
RESIST
ANCE
0
1.4
0.6
-40
TJ, JUNCTION TEMPERATURE (
oC)
1.8
1.0
0.2
40
NORMALIZEDDRAIN
T
O
SOURCE
80
160
120
2.2
ID = 3A
VGS = 10V
ON
RESIST
ANCE
1.15
0.95
40
-40
TJ, JUNCTION TEMPERATURE (
oC)
NORMALIZED
DRAIN
T
O
SOURCE
1.05
0.75
80
160
BREAKDO
WN
V
O
L
T
A
GE
120
0.85
1.25
0
20
102
1.0
0
1234
2
5
10
0.2
0.5
I DR
,REVERSE
DRAIN
CURRENT
(A)
VSD, SOURCE TO DRAIN VOLTAGE (V)
TJ = 150
oC
TJ = 25
oC
2N6798
相關(guān)PDF資料
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2N6800LCC4 3 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
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