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參數(shù)資料
| 型號： | 2N6798 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 5.5 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 85K |
| 代理商： | 2N6798 |
2001 Fairchild Semiconductor Corporation
2N6798 Rev. B
Typical Performance Curves Unless Otherwise Specied
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
TC, CASE TEMPERATURE (
oC)
PO
WER
DISSIP
A
TION
MUL
TIPLIER
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
TC, CASE TEMPERATURE (
oC)
I D
,DRAIN
CURRENT
(A)
0
25
50
75
100
150
2.4
4.8
6.0
125
1.2
3.6
2
1
0.1
10-2
10-5
10-4
10-3
t1, RECTANGULAR PULSE DURATION (s)
0.01
Z
θ
JC
,NORMALIZED
THERMAL
IMPED
ANCE
0.02
0.5
0.1
0.2
0.05
0.01
SINGLE PULSE
10-1
110
t2
PDM
t1
t2
DUTY FACTOR: D = t1/t2
NOTES:
PEAK TJ = PDM x ZθJC x RθJC + TC
VDS, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
102
1.0
I D
,DRAIN
CURRENT
(A)
103
10
1.0
DC
10
s
100
s
1ms
10ms
TJ = MAX RATED
SINGLE PULSE
TC = 25
oC
RθJC = 5k/W
100ms
102
OPERATION IN THIS AREA
LIMITED BY rDS(ON)
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
40
60
80
0
100
25
20
15
0
10
I D
,DRAIN
CURRENT
(A)
5V
VGS = 6V
5
7V
10V
8V
80
s PULSE TEST
4V
2N6798
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6798_10 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL MOSFET |
| 2N6798JANTX | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 200V 5.5A 3-Pin TO-39 制造商:Microsemi 功能描述:Trans MOSFET N-CH 200V 5.5A 3-Pin TO-39 |
| 2N6798JANTXV-PIND | 制造商:International Rectifier 功能描述: |
| 2N6798U | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 200V 18LCC |
| 2N6799 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 3A I(D) | TO-39 |
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