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參數(shù)資料
| 型號(hào)： | 2N6798 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 5.5 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 85K |
| 代理商： | 2N6798 |
2001 Fairchild Semiconductor Corporation
2N6798 Rev. B
Absolute Maximum Ratings
TC = 25
oC, Unless Otherwise Specied
2N6798
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
200
V
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
200
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
5.5
A
TC = 100
oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
3.5
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
22
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Continuous Source Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
5.5
A
Pulse Source Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
22
A
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
25
W
Above TC = 25
oC, Derate Linearly (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.20
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specication is not implied.
NOTE:
1. TJ = 25
oC to 125oC.
Electrical Specications
TC = 25
oC, Unless Otherwise Specied
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 0.25mA
200
-
V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 0.5mA
2.0
-
4.0
V
Gate to Source Leakage
IGSS
VGS = ±20V, VDS = 0V
-
±100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 200V, VGS = 0V
-
250
A
VDS = 160V, VGS = 0V, TC = 125
oC
-
1000
A
On State Voltage (Note 2)
VDS(ON)
VGS = 10V, ID = 5.5A
-
2.20
V
On Resistance (Note 2)
rDS(ON)
VGS = 10V, ID = 3.5A, TA = 25
oC
-
0.25
0.400
VGS = 10V, ID = 3.5A, TA = 125
oC
-
0.750
Diode Forward Voltage (Note 2)
VSD
TC = 25
oC, I
S = 5.5A, VGS = 0V
0.7
-
1.4
V
Forward Transconductance (Note 2)
gfs
VDS = 5V, ID = 3.5A
2.5
4.5
7.5
S
Input Capacitance
CISS
VGS = 0V, VDS = 25V, f = 1.0MHz
(Figure 11)
350
600
900
pF
Output Capacitance
COSS
100
250
450
pF
Reverse Transfer Capacitance
CRSS
40
80
150
pF
Turn-On Delay Time
td(ON)
VDD 77V, ID = 3.5A, ZO = 50,
(Figure 15) MOSFET Switching Times are
Essentially Independent of Operating Tem-
perature.
-
30
ns
Rise Time
tr
-
50
ns
Turn-Off Delay Time
td(OFF)
-
50
ns
Fall Time
tf
-
40
ns
Safe Operating Area
SOA
VDS = 160V, ID = 155mA (Figures 19, 20)
25
-
W
VDS = 4.5V, ID = 5.5A (Figures 19, 20
25
-
W
Thermal Resistance Junction to Case
RθJC
-
5.0
oC/W
Thermal Resistance Junction to Ambient
RθJA
Free Air Operation
-
175
oC/W
Source to Drain Diode Specications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Reverse Recovery Time
trr
TJ = 150
oC, I
SD = 5.5A, dISD/dt = 100A/s
-
450
-
ns
Reverse Recovered Charge
QRR
TJ = 150
oC, I
SD = 5.5A, dISD/dt = 100A/s
-
3.0
-
C
NOTES:
2. Pulse test: pulse width
≤ 300s, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal impedence curve (Figure 3).
2N6798
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| 2N6798_10 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL MOSFET |
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| 2N6798JANTXV-PIND | 制造商:International Rectifier 功能描述: |
| 2N6798U | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 200V 18LCC |
| 2N6799 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 3A I(D) | TO-39 |
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