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參數資料
| 型號： | 2N6660 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓60V,夾斷電流1.1A的N溝道增強型MOSFET晶體管) |
| 中文描述： | N溝道增強型MOSFET晶體管（最小漏源擊穿電壓60V的，夾斷電流1.1A的的N溝道增強型MOSFET的晶體管） |
| 文件頁數： | 2/4頁 |
| 文件大?。?/td> | 88K |
| 代理商： | 2N6660 |
2N6660, VQ1004J/P
Vishay Siliconix
www.Vishay Siliconix.com FaxBack 408-970-5600
11-2
Document Number: 70222
S-00208—Rev. D, 21-Feb-00
Limits
2N6660
VQ1004J/P
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
Static
Drain-Source
Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 10 A
75
60
60
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
1.7
0.8
2
0.8
2.5
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
15 V
100
100
nA
T
C
= 125 C
500
500
Zero G
V lt
Voltage Drain Current
G
I
DSS
V
DS
= 60 V, V
GS
= 0 V
10
A
V
DS
= 35 V, V
GS
= 0 V
D i C
V
DS
= 48 V, V
GS
= 0 V
1
T
C
= 125 C
500
500
V
DS
= 28 V, V
GS
= 0 V
T
C
= 125 C
On-State Drain Current
c
I
D(on)
V
DS
= 10 V, V
GS
= 10 V
3
1.5
1.5
A
D i S
Drain-Source On-Resistance
O R
c
V
GS
= 5 V, I
D
= 0.3 A
e
2
5
5
r
DS(on)
V
GS
= 10 V, I
D
=
1
A
1.3
3
3.5
T
C
= 125 C
e
2.4
4.2
4.9
Forward Transconductance
c
g
fs
V
DS
= 10 V, I
D
= 0.5 A
350
170
170
Common Source
Output Conductance
c
g
os
V
DS
= 10 V, I
D
= 0.1 A
1
mS
Diode Forward Voltage
V
SD
I
S
= 0.99 A, V
GS
= 0 V
0.8
V
Dynamic
Input Capacitance
C
iss
V
= 24 ,
= 0 V
f = 1 MHz
35
50
60
Output Capacitance
C
oss
25
40
50
pF
Reverse Transfer Capacitance
C
rss
DS
7
10
10
Drain-Source Capacitance
C
ds
30
40
Switching
d
Turn-On Time
t
ON
V
DD
=
25
V, R
L
= 23
1 A V
I
D
1 A, V
= 10 V
R
G
= 25
8
10
10
ns
Turn-Off Time
t
OFF
8.5
10
10
Notes
a.
b.
c.
d.
e.
T
= 25 C unless otherwise noted.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
80 s duty cycle
Switching time is essentially independent of operating temperature.
This parameter not registered with JEDEC on 2N6660.
VNDQ06
1%.
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|---|---|
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