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參數(shù)資料
| 型號(hào)： | 2N6660 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓60V,夾斷電流1.1A的N溝道增強(qiáng)型MOSFET晶體管) |
| 中文描述： | N溝道增強(qiáng)型MOSFET晶體管（最小漏源擊穿電壓60V的，夾斷電流1.1A的的N溝道增強(qiáng)型MOSFET的晶體管） |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | 2N6660 |
2N6660, VQ1004J/P
Vishay Siliconix
Document Number: 70222
S-00208—Rev. D, 21-Feb-00
www.siliconix.com FaxBack 408-970-5600
11-1
N-Channel Enhancement-Mode MOSFET Transistors
Part Number
V
(BR)DSS
Min (V)
r
DS(on)
Max ( )
V
GS(th)
(V)
I
D
(A)
2N6660
60
3 @ V
GS
= 10 V
3.5 @ V
GS
= 10 V
0.8 to 2
1.1
VQ1004J/P
0.8 to 2.5
0.46
Low On-Resistance: 1.3
Low Threshold: 1.7 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 8 ns
Low Input and Output Leakage
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
1
2
3
TO-205AD
(TO-39)
Top View
2N6660
D
G
S
Plastic:
Sidebraze: VQ1004P
VQ1004J
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
Dual-In-Line
D
1
D
4
S
1
S
4
G
1
G
4
NC
NC
G
2
G
3
S
2
S
3
D
2
D
3
N
N
N
N
Parameter
Symbol
b l
Single
Total Quad
U i
Unit
2N6660
VQ1004J
VQ1004P
VQ1004J/P
Drain-Source Voltage
V
DS
V
GS
60
60
60
V
Gate-Source Voltage
20
30
20
Continuous Drain Current
(T
J
= 150 C)
T
C
= 25 C
I
D
1.1
0.46
0.46
A
T
C
= 100 C
0.8
3
6.25
2.5
170
20
0.26
2
1.3
0.52
0.96
0.26
2
1.3
0.52
0.96
Pulsed Drain Current
a
I
DM
Power Dissipation
T
C
= 25 C
T
C
= 100 C
P
D
2
W
0.8
62.5
Maximum Junction-to-Ambient
b
Maximum Junction-to-Case
R
thJA
R
thJC
T
J
, T
stg
C/W
Operating Junction and Storage Temperature Range
–55 to 150
C
Notes
a.
b.
Pulse width limited by maximum junction temperature.
This parameter not registered with JEDEC.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6660 | 制造商:SOLID STATE 功能描述:MOSFET, N CH, 60V, 1.7A, TO-39 |
| 2N6660_07 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
| 2N6660_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 60 V (D-S) MOSFET |
| 2N6660-2 | 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 60V 1.1A 3PIN TO-205AD - Bulk |
| 2N6660C4 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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