- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄49859 > 2N5400D74Z (FAIRCHILD SEMICONDUCTOR CORP) 600 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PDF資料下載
參數(shù)資料
| 型號： | 2N5400D74Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 546K |
| 代理商： | 2N5400D74Z |
2N5400
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 1.0 mA, IB = 0
120
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100
A, I
E = 0
130
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, I
C = 0
5.0
V
ICBO
Collector Cutoff Current
VCB = 100 V, IE = 0
VCB = 100 V, IE = 0, TA = 100
°C
100
nA
A
IEBO
Emitter Cutoff Current
VEB = 3.0 V, IC = 0
50
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 5.0 V, IC = 1.0 mA
VCE = 5.0 V, IC = 10 mA
VCE = 5.0 V, IC = 50 mA
30
40
180
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.2
0.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
1.0
V
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
VCB = 10 V, f = 1.0 MHz
6.0
pF
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 10 V,
f = 100 MHz
100
400
hfe
Small-Signal Current Gain
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
30
200
NF
Noise Figure
VCE = 5.0 V, IC = 250
A,
RS = 1.0 k
,
f = 10 Hz to 15.7 kHz
8.0
V
*Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N5400J18Z | 600 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5400J05Z | 600 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5401-AP | 600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5401-BP | 600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5401/D75Z-J25Z | 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5400G | 功能描述:兩極晶體管 - BJT 500mA 130V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5400RA | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5400RLRP | 功能描述:兩極晶體管 - BJT 500mA 130V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5400RLRPG | 功能描述:兩極晶體管 - BJT 500mA 130V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5400S | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR PNP TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。