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參數(shù)資料
| 型號(hào)： | 2N4919 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | GENERAL.PURPOSE POWER TRANSISTORS |
| 中文描述： | 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-225AA |
| 封裝： | PLASTIC, CASE 77-09, 3 PIN |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 113K |
| 代理商： | 2N4919 |
2N4918 thru 2N4920
http://onsemi.com
4
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.7
0.5
0.010.01
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r
(
0.05
0.1
0.2
0.3
0.5
1.0
2.0 3.0
5.0
10
20
30
50
100
200 300
1000
500
θ
JC(t) = r(t)
θ
JC
θ
JC = 4.16
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk)
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.01
SINGLE PULSE
0.1
10
1.0
Figure 5. Active–Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0
2.0
1.0
0.5
0.1
2.0
3.0
5.0
10
20
30
50
100
70
0.2
I
TJ = 150
°
C
dc
5.0 ms
100
μ
s
7.0
PULSE CURVES APPLY BELOW
RATED VCEO
1.0 ms
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMIT @ TC = 25
°
C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150 C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150 C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
t
′
μ
s
t
μ
f
5.0
10
Figure 6. Storage Time
IC, COLLECTOR CURRENT (mA)
2.0
1.0
0.5
0.3
0.2
0.1
0.07
0.05
20
30
50
70
500 700 1000
ts
′
= ts - 1/8 tf
100
3.0
0.7
200 300
TJ = 25
°
C
TJ = 150
°
C
IB1 = IB2
IC/IB = 20
5.0
10
Figure 7. Fall Time
IC, COLLECTOR CURRENT (mA)
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
20
30
50
70
500 700 1000
100
3.0
200
300
TJ = 25
°
C
TJ = 150
°
C
VCC = 30 V
IB1 = IB2
IC/IB = 10
IC/IB = 20
IC/IB = 10
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N4920 | GENERAL.PURPOSE POWER TRANSISTORS |
| 2N4921 | 1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS |
| 2N4922 | 1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS |
| 2N4928DCSM | PNP |
| 2N4941 | TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 50MA I(C) | TO-79 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4919G | 功能描述:兩極晶體管 - BJT 3A 60V 30W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4919G | 制造商:ON Semiconductor 功能描述:TRANSISTORPNP60V1ATO-225 制造商:ON Semiconductor 功能描述:TRANSISTOR,PNP,60V,1A,TO-225 |
| 2N491A | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:Diode |
| 2N491B | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:Diode |
| 2N492 | 制造商:TI 功能描述:2N492 |
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