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參數(shù)資料
| 型號： | 2N4921 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS |
| 中文描述： | 3 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-225 |
| 封裝： | PLASTIC, CASE 77-09, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 106K |
| 代理商： | 2N4921 |
Medium-Power Plastic NPN
Silicon Transistors
. . . designed for driver circuits, switching, and amplifier
applications. These high–performance plastic devices feature:
Low Saturation Voltage —
VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
Excellent Power Dissipation Due to Thermopad Construction —
PD = 30 W @ TC = 25 C
Excellent Safe Operating Area
Gain Specified to IC = 1.0 Amp
Complement to PNP 2N4918, 2N4919, 2N4920
*MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous (1)
Base Current — Continuous
Symbol
2N4921
5.0
2N4922
2N4923
Unit
40
40
IB
PD
60
60
80
80
Vdc
Vdc
Vdc
Adc
Adc
1.0
3.0
1.0
30
Watts
Temperature Range
TJ, Tstg
(1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements.
The 3.0 Amp maximum value is based upon actual current handling capability of the
device (see Figures 5 and 6).
(2) Recommend use of thermal compound for lowest thermal resistance.
*Indicates JEDEC Registered Data.
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 10
1
Publication Order Number:
2N4921/D
2N4921
thru
2N4923
*ON Semiconductor Preferred Device
1 AMPERE
GENERAL–PURPOSE
POWER TRANSISTORS
40–80 VOLTS
30 WATTS
*
CASE 77–09
TO–225AA TYPE
321
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4921/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Medium-Power Plastic NPN Silicon Transistors |
| 2N4921_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Medium−Power Plastic NPN Silicon Transistors |
| 2N4921G | 功能描述:兩極晶體管 - BJT 3A 40V 30W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4922 | 功能描述:兩極晶體管 - BJT 3A 60V 30W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N4922G | 功能描述:兩極晶體管 - BJT 3A 60V 30W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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