參數(shù)資料
型號(hào)： 2N4921
廠商： ON SEMICONDUCTOR
元件分類(lèi)： 功率晶體管
英文描述： 1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS
中文描述： 3 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-225
封裝： PLASTIC, CASE 77-09, 3 PIN
文件頁(yè)數(shù)： 4/8頁(yè)
文件大小： 106K
代理商： 2N4921
2N4921 thru 2N4923
http://onsemi.com
4
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.7
0.5
0.010.01
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r
R
0.05
0.1
0.2
0.3
0.5
1.0
2.0 3.0
5.0
10
20
30
50
100
200 300
1000
500
θ
JC(t) = r(t)
θ
JC
θ
JC = 4.16
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk)
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.01
0.1
SINGLE PULSE
10
7.0
1.0
Figure 5. Active–Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0
2.0
1.0
0.7
0.5
0.1
2.0
3.0
5.0
10
20
30
50
100
70
0.2
I
TJ = 150
°
C
dc
5.0 ms
7.0
PULSE CURVES APPLY BELOW
RATED VCEO
SECOND BREAKDOWN
LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25
°
C
3.0
0.3
1.0 ms
100
μ
s
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150 C; TC
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
150 C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
t
′
μ
s
5.0
10
Figure 6. Storage Time
IC, COLLECTOR CURRENT (mA)
2.0
1.0
0.5
0.3
0.2
0.1
0.07
0.05
20
30
50
70
500 700 1000
100
3.0
0.7
200
300
TJ = 25
°
C
TJ = 150
°
C
IB1 = IB2
ts
′
= ts - 1/8 tf
IC/IB = 10
IC/IB = 20
5.0
10
Figure 7. Fall Time
IC, COLLECTOR CURRENT (mA)
2.0
1.0
0.5
0.3
0.2
0.1
0.07
0.05
20
30
50
70
500 700 1000
100
3.0
0.7
200 300
TJ = 25
°
C
TJ = 150
°
C
VCC = 30 V
IB1 = IB2
IC/IB = 20
IC/IB = 10
IC/IB = 20
t
μ
f
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