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參數(shù)資料
| 型號： | 2N4416-E3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-206AF |
| 封裝： | LEAD FREE, HERMETIC SEALED, TO-72, 4 PIN |
| 文件頁數(shù)： | 6/7頁 |
| 文件大?。?/td> | 99K |
| 代理商： | 2N4416-E3 |
2N4416/2N4416A/SST4416
Vishay Siliconix
www.vishay.com
6
Document Number: 70242
S-50147—Rev. H, 24-Jan-05
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Reverse Admittance
Output Admittance
10
1
0.1
0.01
100
1000
(mS)
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
brs
grs
10
1
0.1
0.01
100
1000
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
bos
gos
(mS)
f Frequency (MHz)
200
500
200
500
10
100
1 k
100 k
10 k
20
0
16
12
8
4
Equivalent Input Noise Voltage vs. Frequency
Output Conductance vs. Drain Current
VDS = 10 V
ID = 5 mA
VGS = 0 V
0.1
1
10
TA = 55_C
125_C
VGS(off) = 3 V
ID Drain Current (mA)
f Frequency (Hz)
20
0
16
12
8
4
VDS = 10 V
f = 1 kHz
VDG Drain-Gate Voltage (V)
ID Drain Current (mA)
Gate Leakage Current
0.1 mA
IGSS @ 25_C
IGSS
@
125_C
Common-Source Forward
Transconductance vs. Drain Current
0.1
1
10
8
0
VGS(off) = 3 V
TA = 55_C
125_C
012
8
416
20
6
4
2
VDS = 10 V
f = 1 kHz
5 mA
1 mA
0.1 mA
TA = 25_C
TA = 125_C
IG @ ID = 5 mA
1 mA
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
100 nA
25_C
en
Noise
V
oltage
nV
/
Hz
g os
Output
Conductance
(
S)
g fs
Forward
T
ransconductance
(mS)
I G
Gate
Leakage
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations.
For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70242.
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