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參數(shù)資料
| 型號(hào)： | 2N4416-E3 |
| 廠商： | VISHAY SILICONIX |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-206AF |
| 封裝： | LEAD FREE, HERMETIC SEALED, TO-72, 4 PIN |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 99K |
| 代理商： | 2N4416-E3 |
2N4416/2N4416A/SST4416
Vishay Siliconix
www.vishay.com
2
Document Number: 70242
S-50147—Rev. H, 24-Jan-05
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage :
(2N/SST4416)
30 V
. . . . . . . . . . . . . . . . . . . . .
(2N4416A)
35 V
. . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current
10 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature
300 _C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature :
(2N Prefix)
65 to 200 _C
. . . . . . . . . . . . . . . . . .
(SST Prefix)
65 to 150_C
. . . . . . . . . . . . . . . . .
Operating Junction Temperature
55 to 150 _C
. . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation :
(2N Prefix)a
300 mW
. . . . . . . . . . . . . . . . . . . . . .
(SST Prefix)b
350 mW
. . . . . . . . . . . . . . . . . . . .
Notes
a.
Derate 2.4 mW/_C above 25_C
b.
Derate 2.8 mW/_C above 25_C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TA = 25_C UNLESS NOTED)
Limits
2N4416
2N4416A
SST4416
Parameter
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V(BR)GSS
IG = 1 mA , VDS = 0 V
36
30
35
30
V
Gate-Source Cutoff Voltage
VGS(off)
VDS = 15 V, ID = 1 nA
3
6
2.5
6
V
Saturation Drain Currentb
IDSS
VDS = 15 V, VGS = 0 V
10
5
15
5
15
5
15
mA
VGS = 20 V, VDS = 0 V (2N)
2
100
pA
Gate Reverse Current
IGSS
TA = 150_C
4
100
Gate Reverse Current
IGSS
VGS = 15 V, VDS = 0 V (SST)
0.002
1
nA
TA = 125_C
0.6
Gate Operating Current
IG
VDG = 10 V, ID = 1 mA
20
pA
Drain Cutoff Currentc
ID(off)
VDS = 10 V, VGS = 6 V
2
pA
Drain-Source On-Resistancec
rDS(on)
VGS = 0 V, ID = 300 mA
150
W
Gate-Source
Forward Voltagec
VGS(F)
IG = 1 mA , VDS = 0 V
0.7
V
Dynamic
Common-Source
Forward Transconductanceb
gfs
VDS = 15 V, VGS = 0 V
6
4.5
7.5
4.5
7.5
4.5
7.5
mS
Common-Source
Output Conductanceb
gos
VDS = 15 V, VGS = 0 V
f = 1 kHz
15
50
mS
Common-Source
Input Capacitance
Ciss
2.2
4
Common-Source
Reverse Transfer Capacitance
Crss
VDS = 15 V, VGS = 0 V
f = 1 MHz
0.7
0.8
pF
Common-Source
Output Capacitance
Coss
1
2
Equivalent Input
Noise Voltagec
en
VDS = 10 V, VGS = 0 V
f = 1 kHz
6
nV
√Hz
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