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參數(shù)資料
| 型號： | 2N4338 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFET(最小柵源擊穿電壓-50V，最大飽和漏極電流0.6mA的N溝道結(jié)型場效應(yīng)管) |
| 中文描述： | N溝道場效應(yīng)（最小柵源擊穿電壓- 50V的最大飽和漏極電流0.6毫安的N溝道結(jié)型場效應(yīng)管） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 73K |
| 代理商： | 2N4338 |
2N4338/4339/4340/4341
Siliconix
P-37408—Rev. D, 04-Jul-94
1
N-Channel JFETs
Product Summary
Part Number
V
GS(off)
(V)
V
(BR)GSS
Min (V)
g
fs
Min (mS)
I
DSS
Max (mA)
2N4338
–0.3 to –1
–50
0.6
0.6
2N4339
–0.6 to –1.8
–50
0.8
1.5
2N4340
–1 to –3
–50
1.3
3.6
2N4341
–2 to –6
–50
2
9
Features
Low Cutoff Voltage: 2N4338 <1 V
High Input Impedance
Very Low Noise
High Gain: A
V
= 80 @ 20 A
Benefits
Full Performance from Low-Voltage
Power Supply: Down to 1 V
Low Signal Loss/System Error
High System Sensitivity
High-Quality Low-Level Signal
Amplification
Applications
High-Gain, Low-Noise Amplifiers
Low-Current, Low-Voltage
Battery-Powered Amplifiers
Infrared Detector Amplifiers
Ultrahigh Input Impedance
Pre-Amplifiers
Description
The 2N4338/4339/4340/4341 n-channel JFETs are
designed for sensitive amplifier stages at low- to
mid-frequencies. Low cut-off voltages accommodate
low-level power supplies and low leakage for improved
system accuracy.
The TO-206AA (TO-18) package is hermetically sealed
and suitable for military processing (see Military
Information). For similar products in TO-226AA (TO-92)
and TO-236 (SOT-23) packages, see the J/SST201 series
data sheet.
D
S
G and Case
TO-206AA
(TO-18)
Top View
1
2
3
Absolute Maximum Ratings
Gate-Source/Gate-Drain Voltage
–50 V
. . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Gate Current
50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature
–65 to 200 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature
–55 to 175 C
. . . . . . . . . . . . . . . . . . . .
Lead Temperature (
1
/
16
” from case for 10 sec.)
Power Dissipation
a
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300 C
300 mW
. . . . . . . . . . . . . . .
Notes
a.
Derate 2 mW/ C above 25 C
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70240.
Applications information may also be obtained via FaxBack, request document #70595 and #70599.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N4339 | N-Channel JFET(最小柵源擊穿電壓-50V，最大飽和漏極電流1.5mA的N溝道結(jié)型場效應(yīng)管) |
| 2N4340 | N-Channel JFET(最小柵源擊穿電壓-50V，最大飽和漏極電流3.6mA的N溝道結(jié)型場效應(yīng)管) |
| 2N4341 | N-Channel JFET(最小柵源擊穿電壓-50V，最大飽和漏極電流9mA的N溝道結(jié)型場效應(yīng)管) |
| 2N4391 | N-Channel JFET(最大導(dǎo)通電阻30Ω，夾斷電流5pA的N溝道結(jié)型場效應(yīng)管) |
| 2N4392 | N-Channel JFET(最大導(dǎo)通電阻60Ω，夾斷電流5pA的N溝道結(jié)型場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N4338 | 制造商:Vishay Siliconix 功能描述:TRANSISTOR JFET N TO-18 |
| 2N4338-2 | 制造商:Vishay Siliconix 功能描述:TRANS JFET N-CH 3PIN TO-18 - Bulk |
| 2N4338-41 | 制造商:CALOGIC 制造商全稱:CALOGIC 功能描述:N-Channel JFET Low Noise Amplifier |
| 2N4338-E3 | 功能描述:JFET 50V 0.6mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N4339 | 功能描述:JFET 50V 1.5mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
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