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參數(shù)資料
| 型號(hào)： | 2N4123 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | General Purpose NPN Silicon Transistor(30V（集電極-發(fā)射極）通用型硅NPN晶體管) |
| 中文描述： | 200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, TO-226AA, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 162K |
| 代理商： | 2N4123 |
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain(1)
(IC = 2.0 mAdc, VCE = 1.0 Vdc)
2N4123
2N4124
(IC = 50 mAdc, VCE = 1.0 Vdc)
2N4123
2N4124
hFE
50
120
25
60
150
360
—
—
—
Collector–Emitter Saturation Voltage(1)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base–Emitter Saturation Voltage(1)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
VCE(sat)
—
0.3
Vdc
VBE(sat)
—
0.95
Vdc
Current–Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
2N4123
2N4124
fT
250
300
—
—
MHz
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
—
8.0
pF
Collector–Base Capacitance
(IE = 0, VCB = 5.0 V, f = 1.0 MHz)
Ccb
—
4.0
pF
Small–Signal Current Gain
(IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k ohm, f = 1.0 kHz)
2N4123
2N4124
hfe
50
120
200
480
—
Current Gain — High Frequency
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
2N4123
2N4124
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz)
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz)
2N4123
2N4124
|hfe|
2.5
3.0
50
120
—
—
200
480
—
Noise Figure
(IC = 100
μ
Adc, VCE = 5.0 Vdc, RS = 1.0 k ohm,
f = 1.0 kHz)
2N4123
2N4124
NF
—
—
6.0
5.0
dB
1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
Figure 1. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 2. Switching Times
IC, COLLECTOR CURRENT (mA)
200
1.0
T
100
50
30
20
70
10.0
5.0
7.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
C
1.0
2.0 3.0
5.0 7.0 10
20 30 40
0.2 0.3
0.5 0.7
Cibo
Cobo
ts
td
tr
tf
VCC = 3 V
IC/IB = 10
VEB(off) = 0.5 V
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