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參數(shù)資料
| 型號(hào)： | 2N4123 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | General Purpose NPN Silicon Transistor(30V（集電極-發(fā)射極）通用型硅NPN晶體管) |
| 中文描述： | 200 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, TO-226AA, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 162K |
| 代理商： | 2N4123 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
2N4123
2N4124
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
30
25
Vdc
Collector–Base Voltage
40
30
Vdc
Emitter–Base Voltage
5.0
Vdc
Collector Current — Continuous
200
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
625
5.0
mW
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
1.5
12
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
RJC
200
°
C/W
Thermal Resistance, Junction to Case
83.3
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IE = 0)
2N4123
2N4124
V(BR)CEO
30
25
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 10 Adc, IE = 0)
2N4123
2N4124
V(BR)CBO
40
30
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO
5.0
—
Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
ICBO
—
50
nAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
—
50
nAdc
1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
Order this document
by 2N4123/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
23
COLLECTOR
3
2
BASE
1
EMITTER
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