參數(shù)資料
型號(hào)： 2N3419
廠商： MICROSEMI CORP-LAWRENCE
元件分類： 小信號(hào)晶體管
英文描述： 3 Amp, 125V, NPN Silicon Power Transistors JAN, JTX, JTXV, JANS
中文描述： 3000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
封裝： TO-5, 3 PIN
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 55K
代理商： 2N3419
2N3418, S, 2N3419, S, 2N3420, S, 2N3421, S, JAN SERIES
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I
C
= 100 mAdc, V
CE
= 2.0 Vdc
I
C
= 1.0 Adc, V
CE
= 2.0 Vdc
I
C
= 2.0 Adc, V
CE
= 2.0 Vdc
I
C
= 5.0 Adc, V
CE
= 5.0 Vdc
Base-Emitter Saturation Voltage
I
C
= 1.0 Adc, I
B
= 0.1 Adc
I
C
= 2.0 Adc, I
B
= 0.2 Adc
Collector-Emitter Saturation Voltage
I
C
= 1.0 Adc, I
B
= 0.1 Adc
I
C
= 2.0 Adc, I
B
= 0.2 Adc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit
Forward Current Transfer Ratio
I
C
= 0.1 Adc, V
CE
= 10 Vdc, f = 20 MHz
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
SWITCHING CHARACTERISTICS
Delay Time
V
BE(off)
= -3.7 Vdc
Rise Time
I
C
= 1.0 Adc, I
B1
=
100 mAdc
Storage Time
V
BE(off)
= -3.7 Vdc
Fall Time
I
C
= 1.0 Adc, I
B2
= -
100
mAdc
SAFE OPERATING AREA
DC Tests
T
C
= 100
0
C, 1 Cycle, t = 1.0 s
Test 1
V
CE
= 5.0 Vdc, I
C
= 3.0 Adc
Test 2
V
CE
= 37 Vdc, I
C
= 0.4 Adc
TEST 3
V
CE
= 60 Vdc, I
C
= 0.185 Adc
V
CE
= 80 Vdc, I
C
= 0.12 Adc
2N3418, S; 2N3419, S
2N3420, S; 2N3421, S
2N3418, S; 2N3419, S
2N3420, S; 2N3421, S
2N3418, S; 2N3419, S
2N3420, S; 2N3421, S
2N3418, S; 2N3419, S
2N3420, S; 2N3421, S
h
FE
20
40
20
40
15
30
10
15
60
120
V
BE(sat)
0.6
0.7
1.2
1.4
0.25
0.5
Vdc
V
CE(sat)
Vdc
h
fe
1.3
8.0
150
C
obo
pF
t
d
t
r
t
s
t
f
0.08
0.22
1.10
0.20
μ
s
μ
s
μ
s
μ
s
2N3418, S; 2N3420, S
2N3419, S; 2N3421, S
Clamped Switching
T
A
= 25
0
C, I
B
= 0.5 Adc, I
C
= 3.0 Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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