參數(shù)資料
型號： 2N3814SJANTX
廠商： Microsemi Corporation
英文描述： NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
中文描述： npn型MEDUIM功率硅晶體管合格每MIL-PRF-19500/393
文件頁數(shù)： 1/2頁
文件大?。?/td> 55K
代理商： 2N3814SJANTX
TECHNICAL DATA
NPN MEDUIM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 393
Devices
Qualified Level
2N3418
2N3814S
2N3419
2N3419S
2N3420
2N3420S
2N3421
2N3421S
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CBO
V
EBO
2N3418, S
2N3420, S
60
85
2N3419, S
2N3421, S
80
125
8.0
3.0
5.0
1.0
15
-65 to +200
Unit
Vdc
Vdc
Vdc
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
t
P
≤
1.0 ms, duty cycle
≤
50%
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +100
0
C
(2)
Operating & Storage Temperature Range
1) Derate linearly 5.72 mW/
0
C for T
A
> 25
0
C
2) Derate linearly 150 mW/
0
C for T
C
> 100
0
C
I
C
Adc
P
T
W
W/
0
C
0
C
T
op
,
T
stg
TO- 5*
2N3418, 2N3419,
2N3420, 2N3421
TO-39* (TO205-AD)
2N3418S, 2N3419S,
2N3420S, 2N3421S
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I
C
= 50 mAdc, I
B
= 0
Collector-Emitter Cutoff Current
V
BE
= -0.5 Vdc, V
CE
= 80 V
dc
V
BE
= -0.5 Vdc, V
CE
= 120 V
dc
Collector-Emitter Cutoff Current
V
CE
= 45 Vdc, I
B
= 0
V
CE
= 60 Vdc, I
B
= 0
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc, I
C
= 0
V
EB
= 8.0 Vdc, I
C
= 0
2N3418, S; 2N3420, S
2N3419, S; 2N3421, S
V
(BR)
CEO
60
80
Vdc
2N3418, S; 2N3420, S
2N3419, S; 2N3421, S
I
CEX
0.3
0.3
μ
Adc
2N3418, S; 2N3420, S
2N3419, S; 2N3421, S
I
CEO
5.0
5.0
μ
Adc
I
EBO
0.5
10
μ
Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
相關PDF資料
PDF描述
2N3814SJANTXV NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
2N3419JANTX Circular Connector; No. of Contacts:100; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
2N3419SJANTX NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
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2N3419JANTXV NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
相關代理商/技術參數(shù)
參數(shù)描述
2N3814SJANTXV 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393
2N3816A 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:PNP SILICON DIFFERENTIAL AMPLIFIERS
2N3817A 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:PNP SILICON DIFFERENTIAL AMPLIFIERS
2N3819 功能描述:射頻JFET晶體管 N-CH -25V 10mA BULK RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導 gFS（最大值/最小值）: 電阻汲極/源極 RDS（導通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel
2N3819 PBFREE 功能描述:TRANS JFET N-CH 25V 10MA TO-92 制造商:central semiconductor corp 系列:- 包裝:Digi-Reel? 零件狀態(tài):有效 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:- 噪聲系數(shù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-226-3，TO-92-3 標準主體（!--TO-226AA） 供應商器件封裝:TO-92 標準包裝:1
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