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參數(shù)資料
| 型號： | 2N3419SJANTX |
| 廠商： | Microsemi Corporation |
| 英文描述： | NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
| 中文描述： | npn型MEDUIM功率硅晶體管合格每MIL-PRF-19500/393 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 55K |
| 代理商： | 2N3419SJANTX |
TECHNICAL DATA
NPN MEDUIM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 393
Devices
Qualified Level
2N3418
2N3814S
2N3419
2N3419S
2N3420
2N3420S
2N3421
2N3421S
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CBO
V
EBO
2N3418, S
2N3420, S
60
85
2N3419, S
2N3421, S
80
125
8.0
3.0
5.0
1.0
15
-65 to +200
Unit
Vdc
Vdc
Vdc
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
t
P
≤
1.0 ms, duty cycle
≤
50%
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +100
0
C
(2)
Operating & Storage Temperature Range
1) Derate linearly 5.72 mW/
0
C for T
A
> 25
0
C
2) Derate linearly 150 mW/
0
C for T
C
> 100
0
C
I
C
Adc
P
T
W
W/
0
C
0
C
T
op
,
T
stg
TO- 5*
2N3418, 2N3419,
2N3420, 2N3421
TO-39* (TO205-AD)
2N3418S, 2N3419S,
2N3420S, 2N3421S
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I
C
= 50 mAdc, I
B
= 0
Collector-Emitter Cutoff Current
V
BE
= -0.5 Vdc, V
CE
= 80 V
dc
V
BE
= -0.5 Vdc, V
CE
= 120 V
dc
Collector-Emitter Cutoff Current
V
CE
= 45 Vdc, I
B
= 0
V
CE
= 60 Vdc, I
B
= 0
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc, I
C
= 0
V
EB
= 8.0 Vdc, I
C
= 0
2N3418, S; 2N3420, S
2N3419, S; 2N3421, S
V
(BR)
CEO
60
80
Vdc
2N3418, S; 2N3420, S
2N3419, S; 2N3421, S
I
CEX
0.3
0.3
μ
Adc
2N3418, S; 2N3420, S
2N3419, S; 2N3421, S
I
CEO
5.0
5.0
μ
Adc
I
EBO
0.5
10
μ
Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
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PDF描述 |
|---|---|
| 2N3419JAN | NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
| 2N3419JANTXV | NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
| 2N3814SJAN | NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
| 2N3442 | NPN Silicon Power Transistor(10A,140V（集電極-發(fā)射極）,117W，硅NPN功率晶體管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3419SJANTXV | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
| 2N341A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 125V V(BR)CEO | 150MA I(C) | TO-11 |
| 2N342 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 60MA I(C) | TO-11 |
| 2N3420 | 功能描述:兩極晶體管 - BJT NPN Power SW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3420A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN |
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