- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371455 > 2N3814SJAN (Microsemi Corporation) NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 PDF資料下載
參數(shù)資料
| 型號(hào)： | 2N3814SJAN |
| 廠商： | Microsemi Corporation |
| 英文描述： | NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
| 中文描述： | npn型MEDUIM功率硅晶體管合格每MIL-PRF-19500/393 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 55K |
| 代理商： | 2N3814SJAN |
TECHNICAL DATA
NPN MEDUIM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 393
Devices
Qualified Level
2N3418
2N3814S
2N3419
2N3419S
2N3420
2N3420S
2N3421
2N3421S
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CBO
V
EBO
2N3418, S
2N3420, S
60
85
2N3419, S
2N3421, S
80
125
8.0
3.0
5.0
1.0
15
-65 to +200
Unit
Vdc
Vdc
Vdc
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
t
P
≤
1.0 ms, duty cycle
≤
50%
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +100
0
C
(2)
Operating & Storage Temperature Range
1) Derate linearly 5.72 mW/
0
C for T
A
> 25
0
C
2) Derate linearly 150 mW/
0
C for T
C
> 100
0
C
I
C
Adc
P
T
W
W/
0
C
0
C
T
op
,
T
stg
TO- 5*
2N3418, 2N3419,
2N3420, 2N3421
TO-39* (TO205-AD)
2N3418S, 2N3419S,
2N3420S, 2N3421S
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I
C
= 50 mAdc, I
B
= 0
Collector-Emitter Cutoff Current
V
BE
= -0.5 Vdc, V
CE
= 80 V
dc
V
BE
= -0.5 Vdc, V
CE
= 120 V
dc
Collector-Emitter Cutoff Current
V
CE
= 45 Vdc, I
B
= 0
V
CE
= 60 Vdc, I
B
= 0
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc, I
C
= 0
V
EB
= 8.0 Vdc, I
C
= 0
2N3418, S; 2N3420, S
2N3419, S; 2N3421, S
V
(BR)
CEO
60
80
Vdc
2N3418, S; 2N3420, S
2N3419, S; 2N3421, S
I
CEX
0.3
0.3
μ
Adc
2N3418, S; 2N3420, S
2N3419, S; 2N3421, S
I
CEO
5.0
5.0
μ
Adc
I
EBO
0.5
10
μ
Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N3442 | NPN Silicon Power Transistor(10A,140V（集電極-發(fā)射極）,117W，硅NPN功率晶體管) |
| 2N3553 | Silicon planar epitaxial overlay transistor |
| 2N3553 | silicon transistors UHF/VHF power transistors |
| 2N3565 | NPN General Purpose Amplifier |
| 2N3570 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3814SJANTX | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
| 2N3814SJANTXV | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
| 2N3816A | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:PNP SILICON DIFFERENTIAL AMPLIFIERS |
| 2N3817A | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:PNP SILICON DIFFERENTIAL AMPLIFIERS |
| 2N3819 | 功能描述:射頻JFET晶體管 N-CH -25V 10mA BULK RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時(shí)的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。