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參數(shù)資料
| 型號： | 2N3814SJAN |
| 廠商： | Microsemi Corporation |
| 英文描述： | NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
| 中文描述： | npn型MEDUIM功率硅晶體管合格每MIL-PRF-19500/393 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 55K |
| 代理商： | 2N3814SJAN |
2N3418, S, 2N3419, S, 2N3420, S, 2N3421, S, JAN SERIES
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I
C
= 100 mAdc, V
CE
= 2.0 Vdc
I
C
= 1.0 Adc, V
CE
= 2.0 Vdc
I
C
= 2.0 Adc, V
CE
= 2.0 Vdc
I
C
= 5.0 Adc, V
CE
= 5.0 Vdc
Base-Emitter Saturation Voltage
I
C
= 1.0 Adc, I
B
= 0.1 Adc
I
C
= 2.0 Adc, I
B
= 0.2 Adc
Collector-Emitter Saturation Voltage
I
C
= 1.0 Adc, I
B
= 0.1 Adc
I
C
= 2.0 Adc, I
B
= 0.2 Adc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit
Forward Current Transfer Ratio
I
C
= 0.1 Adc, V
CE
= 10 Vdc, f = 20 MHz
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
SWITCHING CHARACTERISTICS
Delay Time
V
BE(off)
= -3.7 Vdc
Rise Time
I
C
= 1.0 Adc, I
B1
=
100 mAdc
Storage Time
V
BE(off)
= -3.7 Vdc
Fall Time
I
C
= 1.0 Adc, I
B2
= -
100
mAdc
SAFE OPERATING AREA
DC Tests
T
C
= 100
0
C, 1 Cycle, t = 1.0 s
Test 1
V
CE
= 5.0 Vdc, I
C
= 3.0 Adc
Test 2
V
CE
= 37 Vdc, I
C
= 0.4 Adc
TEST 3
V
CE
= 60 Vdc, I
C
= 0.185 Adc
V
CE
= 80 Vdc, I
C
= 0.12 Adc
2N3418, S; 2N3419, S
2N3420, S; 2N3421, S
2N3418, S; 2N3419, S
2N3420, S; 2N3421, S
2N3418, S; 2N3419, S
2N3420, S; 2N3421, S
2N3418, S; 2N3419, S
2N3420, S; 2N3421, S
h
FE
20
40
20
40
15
30
10
15
60
120
V
BE(sat)
0.6
0.7
1.2
1.4
0.25
0.5
Vdc
V
CE(sat)
Vdc
h
fe
1.3
8.0
150
C
obo
pF
t
d
t
r
t
s
t
f
0.08
0.22
1.10
0.20
μ
s
μ
s
μ
s
μ
s
2N3418, S; 2N3420, S
2N3419, S; 2N3421, S
Clamped Switching
T
A
= 25
0
C, I
B
= 0.5 Adc, I
C
= 3.0 Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3814SJANTX | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
| 2N3814SJANTXV | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
| 2N3816A | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:PNP SILICON DIFFERENTIAL AMPLIFIERS |
| 2N3817A | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:PNP SILICON DIFFERENTIAL AMPLIFIERS |
| 2N3819 | 功能描述:射頻JFET晶體管 N-CH -25V 10mA BULK RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時(shí)的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
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