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| 型號(hào)： | 2N2907AUB-TR |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 100K |
| 代理商： | 2N2907AUB-TR |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
T4-LDS-0055 Rev. 4 (100247)
Page 3 of 6
PACKAGE DIMENSIONS
NOTES:
Dimensions
1. Dimensions are in inches.
Symbol
Inches
Millimeters
Note
2. Millimeters are given for general information only.
Min
Max
Min
Max
3. Beyond r (radius) maximum, TW shall be held for a minimum length
CD
.178
.195
4.52
4.95
of .011 inch (0.28 mm).
CH
.170
.210
4.32
5.33
4. Dimension TL measured from maximum HD.
HD
.209
.230
5.31
5.84
5. Body contour optional within zone defined by HD, CD, and Q.
LC
.100 TP
2.54 TP
6
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm)
LD
.016
.021
0.41
0.53
7,8
below seating plane shall be within .007 inch (0.18 mm) radius of
LL
.500
.750
12.70
19.05
7,8,13
true position (TP) at maximum material condition (MMC) relative to
LU
.016
.019
0.41
0.48
7,8
tab at MMC.
L1
.050
1.27
7,8
7. Dimension LU applies between L1 and L2. Dimension LD applies
L2
.250
6.35
7,8
between L2 and LL minimum. Diameter is uncontrolled in L1 and
P
.100
2.54
beyond LL minimum.
Q
.030
0.76
5
8. All three leads.
TL
.028
.048
0.71
1.22
3,4
9. The collector shall be internally connected to the case.
TW
.036
.046
0.91
1.17
3
10. Dimension r (radius) applies to both inside corners of tab.
r
.010
0.25
10
11. In accordance with ASME Y14.5M, diameters are equivalent to
φx
α
45
° TP
45
° TP
6
symbology.
12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
13. For L suffix devices, dimension LL = 1.5 inches (38.10 mm) min.
and 1.75 inches (44.45 mm) max.
FIGURE 1. Physical dimensions (similar to TO-18)
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| 2N2907AUBTX | 制造商:TT Electronics / OPTEK Technology 功能描述:3 PIN, SMT PNP GENERAL PURPOSE TRANSISTOR 制造商:OPTEK TECHNOLOGY INC 功能描述:3 Pin, SMT PNP general purpose transistor |
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| 2N2907-B | 功能描述:兩極晶體管 - BJT 600mA 60v RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N2907-BP | 功能描述:兩極晶體管 - BJT 600mA 60v RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N2907CSM | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed LCC1 |
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