參數(shù)資料
型號(hào): 2N2907AUB-TR
廠商: MICROSEMI CORP-LAWRENCE
元件分類(lèi): 小信號(hào)晶體管
英文描述: 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: CERAMIC PACKAGE-4
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 100K
代理商: 2N2907AUB-TR
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
T4-LDS-0055 Rev. 4 (100247)
Page 2 of 6
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
IC = 0.1mAdc, VCE = 10Vdc
2N2906A, L, UA, UB, UBC
2N2907A, L, UA, UB, UBC
40
75
IC = 1.0mAdc, VCE = 10Vdc
2N2906A, L, UA, UB, UBC
2N2907A, L, UA, UB, UBC
40
100
175
450
IC = 10mAdc, VCE = 10Vdc
2N2906A, L, UA, UB, UBC
2N2907A, L, UA, UB, UBC
40
100
IC = 150mAdc, VCE = 10Vdc
2N2906A, L, UA, UB, UBC
2N2907A, L, UA, UB, UBC
40
100
120
300
IC = 500mAdc, VCE = 10Vdc
2N2906A, L, UA, UB, UBC
2N2907A, L, UA, UB, UBC
hFE
40
50
Collector-Emitter Saturation Voltage
IC = 150mAdc, IB = 15mAdc
IC = 500mAdc, IB = 50mAdc
VCE(sat)
0.4
1.6
Vdc
Base-Emitter Voltage
IC = 150mAdc, IB = 15mAdc
IC = 500mAdc, IB = 50mAdc
VBE(sat)
0.6
1.3
2.6
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz
2N2906A, L, UA, UB, UBC
2N2907A, L, UA, UB, UBC
hfe
40
100
Magnitude of Small–Signal Short-Circuit
Forward Current Transfer Ratio
IC = 20mAdc, VCE = 20Vdc, f = 100MHz
|hfe|
2.0
Output Capacitance
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Cobo
8.0
pF
Input Capacitance
VEB = 2.0Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz
Cibo
30
pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Time
See MIL-PRF-19500/291
ton
45
ηs
Turn-Off Time
See MIL-PRF-19500/291
toff
300
ηs
(2) Pulse Test: Pulse Width = 300
μs, Duty Cycle ≤ 2.0%.
相關(guān)PDF資料
PDF描述
2N2906A 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18
2N2904A 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
2N2906A 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-18
2N2906DCSM-JQR-A 600 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, MO-041BB
2N2906DCSM 600 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, MO-041BB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N2907AUBTX 制造商:TT Electronics / OPTEK Technology 功能描述:3 PIN, SMT PNP GENERAL PURPOSE TRANSISTOR 制造商:OPTEK TECHNOLOGY INC 功能描述:3 Pin, SMT PNP general purpose transistor
2N2907AUBTXV 制造商:TT Electronics / OPTEK Technology 功能描述:3 PIN, SMT PNP GENERAL PURPOSE TRANSISTOR 制造商:OPTEK TECHNOLOGY INC 功能描述:3 Pin, SMT PNP general purpose transistor
2N2907-B 功能描述:兩極晶體管 - BJT 600mA 60v RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N2907-BP 功能描述:兩極晶體管 - BJT 600mA 60v RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N2907CSM 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:Bipolar PNP Device in a Hermetically sealed LCC1