參數(shù)資料
型號(hào): 2MBI450U4E-120
廠商: FUJI ELECTRIC CO LTD
元件分類: IGBT 晶體管
英文描述: 675 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-7
文件頁數(shù): 8/13頁
文件大?。?/td> 423K
代理商: 2MBI450U4E-120
H04-004-03a
MS5F6057
13
4
Storage temperature
Screw
Torque
-
Tj=125
oC
VCE(sat)
(terminal)
3. Absolute Maximum Ratings ( at Tc= 25
oC unless otherwise specified )
Maximum
Ratings
VGES
Units
V
Symbols
Conditions
Gate-Emitter voltage
Items
VCES
1ms
1200
1350
Tc=80
oC
Tc=25
oC
1ms
Tc=80
oC
V
-
2.15
-
1.90
2.05
2.35
2.10
-
IGES
Collector Power Dissipation
1 device
(*2) Recommendable Value : Mounting 2.5 to 3.5 Nm (M5 or M6)
Pc
Tj=125
oC
VCE(sat)
(chip)
Tj=25
oC
Collector-Emitter voltage
mA
nA
Units
450
900
+150
450
2715
Tstg
V
A
900
W
675
±20
Tc=25
oC
Continuous
-Ic
-Ic pulse
2.30
Conditions
VCE=0V
-
-40 to +125
-
600
VGE=±20V
Icp
Items
Collector current
Ic
Tj
4. Electrical characteristics ( at Tj= 25
oC unless otherwise specified )
Viso
AC : 1min.
2500
VAC
Symbols
typ.
max.
Characteristics
min.
ICES
-
3.0
VGE=0V
VCE=1200V
V
Ic=450mA
6.5
8.5
VGE(th)
VCE=20V
4.5
VCE=10V,VGE=0V,f=1MHz
-
Ic=450A
Tj=25
oC
VGE=15V
-
50
-
nF
ton
Vcc=600V
-
0.32
1.20
us
Cies
0.60
tr(i)
VGE=±15V
-
0.03
-
tr
Ic=450A
-
0.10
1.00
tf
-
0.07
0.30
toff
RG=0.68Ω
-
VF
(chip)
Tj=25
oC
0.41
VF
(terminal)
IF=450A
Tj=25
oC
VGE=0V
Tj=125
oC
V
-
2.00
-
1.65
1.80
1.75
-
0.35
-
IF=450A
-
Tj=125
oC
-
(*3) Recommendable Value : Terminals 3.5 to 4.5 Nm (M6)
between terminal and copper base (*1)
N m
(*1) All terminals should be connected together when isolation test will be done.
Mounting (*2)
Terminals (*3)
3.5
4.5
Junction temperature
oC
Isolation
voltage
(*4) Biggest internal terminal resistance among arm.
Zero gate voltage
collector current
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
trr
-
us
R lead
Forward on voltage
Reverse recovery time
Lead resistance,
terminal-chip (*4)
0.45
-
1.90
2.05
Collector-Emitter
saturation voltage
Input capacitance
Turn-on time
Turn-off time
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