參數(shù)資料
型號: 2MBI450U4E-120
廠商: FUJI ELECTRIC CO LTD
元件分類: IGBT 晶體管
英文描述: 675 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-7
文件頁數(shù): 13/13頁
文件大?。?/td> 423K
代理商: 2MBI450U4E-120
H04-004-03a
MS5F6057
13
9
Dynamic Gate charge (typ.)
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25
oC
Vcc=600V, Ic=450A, Tj=25oC
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25oC / chip
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125oC / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25oC / chip
0
200
400
600
800
1000
1200
0
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
C
ol
le
ct
or
cu
rr
en
t:
Ic
[A
]
8V
10V
12V
15V
VGE=20V
0
200
400
600
800
1000
1200
0
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
C
ol
le
ct
or
cu
rr
en
t:
Ic
[A
]
8V
10V
12V
15V
VGE=20V
0
200
400
600
800
1000
1200
0
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
C
ol
le
ct
or
cu
rr
en
t:
Ic
[A
]
Tj=125oC
Tj=25oC
0
2
4
6
8
10
5
10
15
20
25
Gate-Emitter voltage : VGE [ V ]
Ic=225A
Ic=450A
Ic=900A
C
ol
le
ct
or
-E
m
itt
er
vo
lta
ge
:V
C
E
[V
]
1.0
10.0
100.0
0
10
20
30
Collector-Emitter voltage : VCE [ V ]
Cies
C
ap
ac
ita
nc
e
:C
ie
s,
C
oe
s,
C
re
s
[n
F
]
Coes
Cres
0
500
1000
1500
2000
2500
Gate charge : Qg [ nC ]
C
ol
le
ct
or
-
E
m
itt
er
vo
lta
ge
:V
C
E
[2
00
V
/d
iv
]
G
at
e-
E
m
itt
er
vo
lta
ge
:V
G
E
[5
V
/d
iv
]
VGE
VCE
0
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