參數(shù)資料
型號: 2MBI600NT-060
元件分類: IGBT 晶體管
英文描述: 600 A, 600 V, N-CHANNEL IGBT
文件頁數(shù): 1/4頁
文件大?。?/td> 154K
代理商: 2MBI600NT-060
IGBT MODULE ( N series )
n
n Features
Square RBSOA
Low Saturation Voltage
Less Total Power Dissipation
Improved FWD Characteristic
Minimized Internal Stray Inductance
Overcurrent Limiting Function (~3 Times Rated Current)
n
n Applications
High Power Switching
A.C. Motor Controls
D.C. Motor Controls
Uninterruptible Power Supply
n
n Outline Drawing
n
n Maximum Ratings and Characteristics
Absolute Maximum Ratings ( T
c=25°C
)
Items
Symbols
Ratings
Units
Collector-Emitter Voltage
VCES
600
V
Gate -Emitter Voltage
VGES
± 20
V
Continuous
IC
600
Collector
1ms
IC PULSE
1200
Current
Continuous
-IC
600
1ms
-IC PULSE
1200
Max. Power Dissipation
PC
2100
W
Operating Temperature
Tj
+150
°C
Storage Temperature
Tstg
-40
+125
°C
Isolation Voltage
A.C. 1min.
Vis
2500
V
Mounting *1
3.5
Terminals *2
4.5
Note: *1:Recommendable Value; 2.5
3.5 Nm (M5) or (M6)
*2:Recommendable Value; 3.5
4.5 Nm (M6)
Electrical Characteristics ( at T
j=25°C )
Items
Symbols
Test Conditions
Min.
Typ.
Max.
Units
Zero Gate Voltage Collector Current
ICES
VGE=0V VCE=600V
4.0
mA
Gate-Emitter Leackage Current
IGES
VCE=0V VGE=
± 20V
60
A
Gate-Emitter Threshold Voltage
VGE(th)
VGE=20V IC=600mA
4.5
7.5
V
Collector-Emitter Saturation Voltage
VCE(sat)
VGE=15V IC=600A
2.9
V
Input capacitance
Cies
VGE=0V
39600
Output capacitance
Coes
VCE=10V
8800
pF
Reverse Transfer capacitance
Cres
f=1MHz
2670
tON
VCC=300V
0.6
1.2
tr
IC=600A
0.2
0.6
tOFF
VGE=
± 15V
0.6
1.0
tf
RG=2.7
0.2
0.35
Diode Forward On-Voltage
VF
IF=600A VGE=0V
3.1
V
Reverse Recovery Time
trr
IF=600A
300
ns
Thermal Characteristics
Items
Symbols
Test Conditions
Min.
Typ.
Max.
Units
Rth(j-c)
IGBT
0.06
Thermal Resistance
Rth(j-c)
Diode
0.15
°C/W
Rth(c-f)
With Thermal Compound
0.0167
n
n Equivalent Circuit
Screw Torque
Turn-on Time
Turn-off Time
s
A
Nm
相關(guān)PDF資料
PDF描述
2N1151 25 mA, NPN, Si, SMALL SIGNAL TRANSISTOR
2N1152 25 mA, NPN, Si, SMALL SIGNAL TRANSISTOR
2N1150 25 mA, NPN, Si, SMALL SIGNAL TRANSISTOR
2N1225 10 mA, 40 V, PNP, Ge, SMALL SIGNAL TRANSISTOR, TO-12
2N1303 300 mA, PNP, Ge, SMALL SIGNAL TRANSISTOR, TO-5
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2MBI600U2E-060 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBTs
2MBI600U4G-120 制造商:Fuji Electric 功能描述:IGBT, MODULE, DUAL, 600A/1200V 制造商:Fuji Electric 功能描述:IGBT, MODULE, DUAL, 600A/1200V; Transistor Polarity:Dual N Channel; DC Collector Current:800A; Collector Emitter Voltage Vces:2.08V; Power Dissipation Pd:3.67kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module;;RoHS Compliant: No
2MBI600U4G-170 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE
2MBI600VD-060-50 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE (V series) 600V / 600A / 2 in one package
2MBI600VE-120-50 制造商:Fuji Electric 功能描述:IGBT 2 PK V SE 600A 1200V M238G 制造商:Fuji Electric 功能描述:2 Pack IGBT VE-series, 600A, 1200V