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參數(shù)資料
| 型號(hào)： | 2MBI225VN-120-50 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 225 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-11 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 599K |
| 代理商： | 2MBI225VN-120-50 |
33
IGBT Modules
2MBI225VN-120-50
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=225A, Vge=±15V, Tj=125°C, 150°C
Switching time vs. Collector current (typ.)
Vcc=600V, Vge=±15V, Rg=1.6Ω, Tj=25°C
Vcc=600V, Vge=±15V, Rg=1.6Ω, Tj=125°C, 150°C
Reverse bias safe operating area (max.)
+Vge=15V, -Vge=15V, Rg=1.6Ω, Tj=150°C
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=225A, Vge=±15V, Tj=125°C, 150°C
Switching loss vs. Collector current (typ.)
Vcc=600, Vge=±15V, Rg=1.6Ω, Tj=125°C, 150°C
Switching time vs. Collector current (typ.)
[INVERTER]
10
100
1000
10000
0
100
200
300
400
500
Collector current: Ic [A]
S
w
itc
hi
ng
tim
e:
to
n,
tr,
to
ff,
tf
[n
se
c]
tf
tr
toff
ton
10
100
1000
10000
0
100
200
300
400
500
Collector current: Ic [A]
S
w
itc
hi
ng
tim
e:
to
n,
tr,
to
ff,
tf
[n
se
c]
tf
tr
toff
ton
Tj=125oC
Tj=150oC
10
100
1000
10000
0.1
1
10
100
Gate resistance: Rg [Ω]
S
w
itc
hi
ng
tim
e:
to
n,
tr,
to
ff,
tf
[n
se
c]
tf
tr
toff
ton
Tj=125oC
Tj=150oC
0
20
40
60
80
0
100
200
300
400
500
Collector current: Ic [A]
S
w
itc
hi
ng
lo
ss
:E
on
,E
of
f,
E
rr
[m
J/
pu
ls
e]
Eon
Eoff
Err
Tj=125oC
Tj=150oC
0
50
100
150
0.1
1.0
10.0
100.0
Gate resistance: Rg [Ω]
S
w
itc
hi
ng
lo
ss
:E
on
,E
of
f,
E
rr
[m
J/
pu
ls
e]
Eoff
Err
Eon
Tj=125oC
Tj=150oC
0
100
200
300
400
500
600
0
500
1000
1500
Collector-Emitter voltage: Vce [V]
C
ol
le
ct
or
cu
rr
en
t:
Ic
[A
]
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