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參數(shù)資料
| 型號： | 2MBI225VN-120-50 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 225 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-11 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 599K |
| 代理商： | 2MBI225VN-120-50 |
1
2MBI225VN-120-50
IGBT Modules
IGBT MODULE (V series)
1200V / 225A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specied)
Items
Symbols
Conditions
Maximum ratings
Units
Inv
er
te
r
Collector-Emitter voltage
VCES
1200
V
Gate-Emitter voltage
VGES
±20
V
Collector current
Ic
Continuous
Tc=80°C
225
A
Ic pulse
1ms
Tc=80°C
450
-Ic
225
-Ic pulse
1ms
450
Collector power dissipation
Pc
1 device
1070
W
Junction temperature
Tj
175
°C
Operating junction temperature (under switching conditions) Tjop
150
Case temperature
TC
125
Storage temperature
Tstg
-40 to +125
Isolation voltage between terminal and copper base (*1) Viso
AC : 1min.
2500
VAC
between thermistor and others (*2)
Screw torque
Mounting (*3)
-
3.5
N m
Terminals (*4)
4.5
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : Mounting : 2.5-3.5 Nm (M5) Note *4: Recommendable value : Terminals : 3.5-4.5 Nm (M6)
Electrical characteristics (at Tj= 25°C unless otherwise specied)
Items
Symbols
Conditions
Characteristics
Units
min.
typ.
max.
Inv
er
te
r
Zero gate voltage collector current
ICES
VGE = 0V, VCE = 1200V
-
3.0
mA
Gate-Emitter leakage current
IGES
VCE = 0V, VGE = ±20V
-
600
nA
Gate-Emitter threshold voltage
VGE (th)
VCE = 20V, IC = 225mA
6.0
6.5
7.0
V
Collector-Emitter saturation voltage
VCE (sat)
(terminal)
VGE = 15V
IC = 225A
Tj=25°C
-
2.20
2.65
V
Tj=125°C
-
2.55
-
Tj=150°C
-
2.60
-
VCE (sat)
(chip)
Tj=25°C
-
1.85
2.30
Tj=125°C
-
2.20
-
Tj=150°C
-
2.25
-
Input capacitance
Cies
VCE = 10V, VGE = 0V, f = 1MHz
-
18
-
nF
Turn-on time
ton
VCC = 600V
IC = 225A
VGE = ±15V
RG = 1.6
-
550
1200
nsec
tr
-
180
600
tr (i)
-
120
-
Turn-off time
toff
-
1050
2000
tf
-
110
350
Forward on voltage
VF
(terminal)
VGE = 0V
IF = 225A
Tj=25°C
-
2.05
2.50
V
Tj=125°C
-
2.20
-
Tj=150°C
-
2.15
-
VF
(chip)
Tj=25°C
-
1.70
2.15
Tj=125°C
-
1.85
-
Tj=150°C
-
1.80
-
Reverse recovery time
trr
IF = 225A
-
200
600
nsec
The
rm
isto
r
Resistance
R
T=25°C
-
5000
-
T=100°C
465
495
520
B value
B
T=25/50°C
3305
3375
3450
K
Thermal resistance characteristics
Items
Symbols
Conditions
Characteristics
Units
min.
typ.
max.
Thermal resistance (1device)
Rth(j-c)
Inverter IGBT
-
0.14
°C/W
Inverter FWD
-
0.19
Contact thermal resistance (1device) (*5)
Rth(c-f)
with Thermal Compound
-
0.0167
-
Note *5: This is the value which is dened mounting on the additional cooling n with thermal compound.
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