參數(shù)資料
型號(hào): 2MBI150U4A-120
廠商: FUJI ELECTRIC CO LTD
元件分類(lèi): IGBT 晶體管
英文描述: IGBT MODULE
中文描述: 200 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-7
文件頁(yè)數(shù): 9/13頁(yè)
文件大小: 433K
代理商: 2MBI150U4A-120
H04-004-03a
MS5F6031
13
9
Dynamic Gate charge (typ.)
Vcc=600V, Ic=150A, Tj=25
o
C
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25
o
C
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25
o
C / chip
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125
o
C / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25
o
C / chip
0
100
200
300
400
0
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
C
8V
10V
12V
15V
VGE=20V
0
100
200
300
400
0
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
C
8V
10V
12V
15V
VGE=20V
0
100
200
300
400
0
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
C
Tj=125
o
C
Tj=25
o
C
0
2
4
6
8
10
5
10
Gate-Emitter voltage : VGE [ V ]
15
20
25
Ic=75A
Ic=150A
Ic=300A
C
0.1
1.0
10.0
100.0
0
10
20
30
Collector-Emitter voltage : VCE [ V ]
Cies
C
Coes
Cres
0
200
400
600
800
Gate charge : Qg [ nC ]
C
G
VGE
VCE
0
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