參數(shù)資料
型號: 2MBI150U4A-120
廠商: FUJI ELECTRIC CO LTD
元件分類: IGBT 晶體管
英文描述: IGBT MODULE
中文描述: 200 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-7
文件頁數(shù): 4/13頁
文件大?。?/td> 433K
代理商: 2MBI150U4A-120
H04-004-03a
MS5F6031
13
4
Storage temperature
Isolation
voltage
Screw
Torque
Collector-Emitter
saturation voltage
Input capacitance
Turn-on time
Turn-off time
-
us
R lead
Forward on voltage
Reverse recovery time
Lead resistance,
terminal-chip (*3)
(*3) Biggest internal terminal resistance among arm.
1.39
-
1.90
2.00
1.65
1.75
2.05
-
1.80
Junction temperature
o
C
Zero gate voltage
collector current
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
m
Ω
trr
3.5
between terminal and copper base (*1)
N m
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : 2.5 to 3.5 Nm (M5)
Mounting (*2)
Terminals (*2)
-
0.35
-
IF=150A
-
Tj=125
o
C
-
V
-
-
-
VF
(chip)
Tj=25
o
C
0.41
0.07
VF
(terminal)
IF=150A
VGE=0V
Tj=25
o
C
Tj=125
o
C
1.00
0.30
tf
-
toff
RG=2.2
Ω
-
0.60
-
tr(i)
VGE=±15V
-
0.03
tr
Ic=150A
-
0.10
17
0.32
-
nF
ton
Vcc=600V
-
1.20
us
Cies
VGE(th)
VCE=20V
Ic=150mA
4.5
VCE=10V,VGE=0V,f=1MHz
-
Ic=150A
VGE=15V
Tj=25
o
C
Tj=125
o
C
Tj=25
o
C
Tj=125
o
C
-
-
V
6.5
8.5
ICES
-
-
1.0
VGE=0V
VCE=0V
VGE=±20V
VCE=1200V
Symbols
typ.
max.
Characteristics
min.
Icp
Items
Collector current
Ic
Tj
Tstg
4. Electrical characteristics ( at Tj= 25
o
C unless otherwise specified )
Viso
AC : 1min.
2500
VAC
-Ic
-Ic pulse
Pc
2.30
-
2.05
-
Conditions
-
-40 to +125
-
200
V
V
A
300
150
W
200
150
400
±20
Tc=25
o
C
Tc=80
o
C
Tc=25
o
C
Tc=80
o
C
Continuous
Collector-Emitter voltage
Gate-Emitter voltage
mA
nA
Units
300
735
+150
IGES
Collector Power Dissipation
1 device
VCE(sat)
(chip)
V
-
-
2.15
2.35
1.90
2.10
VCES
VGES
1ms
1200
1ms
3. Absolute Maximum Ratings ( at Tc= 25
o
C unless otherwise specified )
Maximum
Ratings
Units
Symbols
Conditions
Items
-
VCE(sat)
(terminal)
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