參數(shù)資料
型號(hào)： 2MBI200-120-01
廠商： FUJI ELECTRIC HOLDINGS CO., LTD.
英文描述： 1200V / 200A 2 in one-package
中文描述： 1200伏/ 200安培在一個(gè)2級(jí)封裝
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 195K
代理商： 2MBI200-120-01
2MBI200NB-120-01
1200V / 200A 2 in one-package
IGBT Module
Features
· VCE(sat) classified for easy parallel connection
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings
(at Tc=25°C unless otherwise specified)
Item
Symbol
Collector-Emitter voltage V
CES
Gate-Emitter voltage V
GES
Collector Continuous I
C
current 1ms I
C
pulse
-I
C
1ms -I
C
pulse
Max. power dissipation P
C
Operating temperature T
j
Storage temperature T
stg
Isolation voltage V
is
Screw torque Mounting *
1
Terminals *
2
*
1 :
Recommendable value : 2.5 to 3.5 N·m (M5) or (M6)
*
2 :
Recommendable value : 3.5 to 4.5 N·m (M6)
Rating
1200
±20
200
400
200
400
1500
+150
-40 to +125
AC 2500 (1min.)
3.5
4.5
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
t
on
t
r
t
off
t
f
V
F
t
rr
– – 0.35
Turn-off time
Diode forward on voltage
Reverse recovery time
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
– – 2.0
– – 30
4.5 – 7.5
– – 3.3
– 32000 –
– 11600 –
– 10320 –
– 0.65 1.2
– 0.25 0.6
– 0.85 1.5
– 0.35 0.5
– – 3.0
V
GE
=0V, V
CE
=1200V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=200mA
V
GE
=15V, I
C
=200A
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=200A
V
GE
=±15V
R
G
=4.7ohm
I
F
=200A, V
GE
=0V
I
F
=200A
mA
μA
V
V
pF
μs
V
μs
Electrical characteristics (at Tj=25°C unless otherwise specified)
Thermal resistance characteristics
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Rth(j-c)
Thermal resistance Rth(j-c)
Rth(c-f)*
– 0.025 –
* :
This is the value which is defined mounting on the additional cooling fin with thermal compound
– – 0.085
– – 0.18
IGBT
Diode
the base to cooling fin
°C/W
°C/W
°C/W
Equivalent Circuit Schematic
¤ Current control circuit
G1 E1 G2 E2
C1
E2
C2E1
¤
¤
V
CE(sat)
classification
Rank Lenge Conditions
F 2.25 to 2.50V
A 2.40 to 2.65V Ic = 200A
B 2.55 to 2.80V V
GE
= 15V
C 2.70 to 2.95V Tj = 25°C
D 2.85 to 3.10V
E 3.00 to 3.30V
相關(guān)PDF資料
PDF描述
2MBI200L-120 IGBT MODULE ( L series)
2MBI200N-060-03 Circular Connector; Body Material:Aluminum Alloy; Series:MS3116; Number of Contacts:39; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin
2MBI200NT-120-02 CAP CERM 4.7UF 200V Z5U RAD
2MBI200TA-060 IGBT Module
2MBI200U4B-120 IGBT MODULE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2MBI200F-060 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE(F series)
2MBI200HH-120-50 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:HIGH SPEED IGBT MODULE 1200V / 200A / 2 in one package
2MBI200J060 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 200A I(C)
2MBI200J120 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 200A I(C)
2MBI200L-060 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT mold type
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