參數(shù)資料
型號： 29LV650
廠商： Fujitsu Limited
英文描述： 64M (4M x 16) BIT
中文描述： 64M號（4米× 16）位
文件頁數(shù)： 19/57頁
文件大?。?/td> 625K
代理商： 29LV650
MBM29LV650UE/651UE-
90/12
19
RESET
Hardware Reset Pin
The MBM29LV650UE/651UE devices may be reset by driving the RESET pin to V
IL
. The RESET pin has a pulse
requirement and has to be kept low (V
IL
) for at least “t
RP
” in order to properly reset the internal state machine.
Any operation in the process of being executed will be terminated and the internal state machine will be reset
to the read mode “t
READY
” after the RESET pin is driven low. Furthermore, once the RESET pin goes high, the
devices require an additional “t
RH
” before it will allow read access. When the RESET pin is low, the devices will
be in the standby mode for the duration of the pulse and all the data output pins will be tri-stated. If a hardware
reset occurs during a program or erase operation, the data at that particular location will be corrupted.
Write Protect (WP)
The Write Protection function provides a hardware method of protecting certain “outermost” 32K word sector
without using V
ID
.
If the system asserts V
IL
on the WP pin, the device disables program and erase functions in the “outermost”
32K word sector independently of whether this sector was protected or unprotected using the method described
in “Sector Protection/Unprotection”. The outermost 32K word sector is the highest addresses in
MBM29LV650UE, or the lowest addresses in MBM29LV651UE.
(MBM29LV650UE: SA127, MBM29LV651UE: SA0)
If the system asserts V
IH
on the WP pin, the device reverts to whether the outermost 32K word sector was last
set to be protected or unprotected. That is, sector protection or unprotection for this sector depends on whether
this was last protected or unprotected using the method described in “Sector protection/unprotection”.
Accelerated Program Operation
MBM29LV650UE/651UE offers accelerated program operation which enables the programming in high speed.
If the system asserts V
ACC
to the ACC pin, the device automatically enters the acceleration mode and the time
required for program operation will reduce to about 50%. This function is primarily intended to allow high speed
program, so caution is needed as the sector group will temporarily be unprotected.
The system would use a fast program command sequence when programming during acceleration mode. Set
command to fast mode and reset command from fast mode is not necessary. When the device enters the
acceleration mode, the device automatically set to fast mode. Therefore, the present sequence could be used
for programming and detection of completion during acceleration mode.
Removing V
ACC
from the ACC pin returns the device to normal operation. Do not remove V
ACC
from the ACC pin
while programming. (See Figure 15.)
相關(guān)PDF資料
PDF描述
29LV800BB-70 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV800BB-90 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV800BT-70 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV800BT-90 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV800BE 8M (1M x 8/512 K x 16) BIT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
29LV800BB-70 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV800BB-90 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV800BE 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M x 8/512 K x 16) BIT
29LV800BT-70 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV800BT-90 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
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