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參數(shù)資料
| 型號： | 1N4154-TR |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | DIODE 0.15 A, 35 V, SILICON, SIGNAL DIODE, DO-35, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2, Signal Diode |
| 中文描述： | Diodes (General Purpose, Power, Switching) Vr/35v Io/150mA T/R |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 99K |
| 代理商： | 1N4154-TR |
www.vishay.com
2
Document Number 85524
Rev. 1.9, 17-Aug-10
1N4154
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
Test condition
I
F
= 30 mA
V
R
= 25 V
V
R
= 25 V, T
j
= 150 °C
I
R
= 5 μA, t
p
/T = 0.01,
t
p
= 0.3 ms
V
R
= 0, f = 1 MHz,
V
HF
= 50 mV
I
F
= I
R
= 10 mA,
i
R
= 1 mA
I
F
= 10 mA, V
R
= 6 V,
i
R
= 0.1 x I
R
, R
L
= 100
Ω
Symbol
V
F
I
R
I
R
Min.
Typ.
880
Max.
1000
Unit
mV
Reverse current
9
100
nA
100
μA
Breakdown voltage
V
(BR)
35
V
Diode capacitance
C
D
4
pF
Reverse recovery time
t
rr
4
ns
t
rr
2
ns
Figure 1. Reverse Current vs. Junction Temperature
Figure 2. Forward Current vs. Forward Voltage
0
40
8
0
120
160
0.01
0.1
1
10
100
I
v
e
u
r
μ
A
R
T
j
- J
u
nction Temperat
u
re (°C)
200
94 9154
V
R
= 25
V
Scattering Limit
0
0.4
0.
8
1.2
1.6
0.1
1
10
100
1000
I
w
a
u
r
F
V
- For
w
ard
V
oltage (
V
)
F
2.0
94 9152
T = 25 °C
T = 100 °C
Figure 3. Diode Capacitance vs. Reverse Voltage
0.1
1
10
0
0.5
1.0
1.5
2.0
3.0
C
-
D
V
R
- Re
v
erse
V
oltage (
V
)
100
94 9156
2.5
f = 1 MHz
T
j
= 25 °C
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