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參數(shù)資料
| 型號： | μPD29F008L |
| 廠商： | NEC Corp. |
| 英文描述： | 8 M-Bit CMOS 3.0 V-Only Flash Memory(8M CMOS 3V工作電壓的閃存) |
| 中文描述： | 8 m位的CMOS 3.0 V型只有閃存（800萬的CMOS 3V的工作電壓的閃存） |
| 文件頁數(shù)： | 9/32頁 |
| 文件大小： | 172K |
| 代理商： | ΜPD29F008L |
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Preliminary Data Sheet
9
P
PD29F008L
Operation Mode (Command Mode)
Command Sequence
First bus
Write cycle
Second bus
write cycle
Third bus
write cycle
Fourth bus
write cycle
Fifth bus
write cycle
Sixth bus
write cycle
Address
Data
Address
Data
Address
Data
Address
Data
Address
Data
Address
Data
Reset/Read
1
xxxxH
F0H
e
e
e
e
e
e
e
e
e
e
Read product ID code
4
5555H
AAH
2AAAH
55H
5555H
90H
IA
ID
e
e
e
e
Program
4
5555H
AAH
2AAAH
55H
5555H
A0H
PA
PD
e
e
e
e
Chip erase
6
5555H
AAH
2AAAH
55H
5555H
80H
5555H
AAH
2AAAH
55H
5555H
10H
Sector erase
6
5555H
AAH
2AAAH
55H
5555H
80H
5555H
AAH
2AAAH
55H
EA
30H
Sector erase suspend
1
xxxxH
B0H
e
e
e
e
e
ee
e
e
e
e
Sector erase Resume
1
xxxxH
30H
e
e
e
e
e
e
e
e
e
e
Remark
x: V
IL
or V
IH
EA = Block Address of Memory Location to be erased.
PA = Address of Memory Location to be programmed.
PD = Data to be programmed at Location PA.
IA = Identifier Address (00000H: Address for Manufacturer ID, 00001H: Address for Device ID).
ID = Data Read from Location IA during Read product ID code.
10H : Manufacturer code
3EH: Device code for a Type T
37H : Device code for a Type B
Bus
Cycles
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