參數(shù)資料
型號: μPD29F008L
廠商: NEC Corp.
英文描述: 8 M-Bit CMOS 3.0 V-Only Flash Memory(8M CMOS 3V工作電壓的閃存)
中文描述: 8 m位的CMOS 3.0 V型只有閃存(800萬的CMOS 3V的工作電壓的閃存)
文件頁數(shù): 25/32頁
文件大?。?/td> 172K
代理商: ΜPD29F008L
Preliminary Data Sheet
25
P
PD29F008L
Alternate /CE Controlled Write Operation Timing Chart
Ax
/WE
/OE
/CE
Data
3.0 V
t
OEHC
t
CEP
t
DH
t
DS
t
APT
t
CEH
t
WES
5555H
t
CW2
t
AS
t
AH
PA
A0H
/Data Polling
PA
PD
I/O7
D
OUT
Remarks 1.
PA is address of the memory location to be programmed.
2.
PD is data to be programmed at byte address.
3.
I/O7 is the output of the complement of the data written to the device.
4.
D
OUT
is the output of the data written to the device.
5.
Figure indicates last two bus cycles of four bus cycle sequence.
6.
These waveforms are for the word mode.
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