- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373850 > ZXTC2061E6 (Zetex Semiconductor) 12V, SOT23-6, complementary medium power transistors PDF資料下載
參數(shù)資料
| 型號： | ZXTC2061E6 |
| 廠商： | Zetex Semiconductor |
| 英文描述： | 12V, SOT23-6, complementary medium power transistors |
| 中文描述： | 12V的，采用SOT23 - 6，互補(bǔ)中等功率晶體管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 729K |
| 代理商： | ZXTC2061E6 |
ZXTC2061E6
Issue 1 - November 2007
Zetex Semiconductors plc 2007
2
www.zetex.com
Absolute maximum and thermal ratings
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b)For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(c) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(d)As above measured at t<5 seconds.
(e) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance
graph.
(f) For device with one active die, both collectors attached to a common sink.
(g)For device with two active dice running at equal power, split sink 50% to each collector.
PARAMETER
Collector-base voltage
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
Limit
20(-12)
Unit
V
Collector-emitter voltage
12(-12)
V
Emitter-base voltage
7(-7)
V
Continuous collector current
(c)(f)
Peak pulse current
5(-3.5)
A
12(-10)
A
Base current
1(-1)
A
Power dissipation at T
A
=25
°
C
(a)(f)
Linear derating factor
Power dissipation at T
A
=25
°
C
(b)(f)
Linear derating factor
Power dissipation at T
A
=25
°
C
(b)(g)
Linear derating factor
Power dissipation at T
A
=25
°
C
(c)(f)
Linear derating factor
Power dissipation at T
A
=25
°
C
(d)(f)
Linear derating factor
Operating and storage temperature range
0.7
5.6
W
mW/
°
C
P
D
0.9
7.2
W
mW/
°
C
P
D
1.1
8.8
W
mW/
°
C
P
D
1.1
8.8
W
mW/
°
C
P
D
1.7
13.6
W
mW/
°
C
T
j
, T
stg
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
R
θ
JA
-55 to +150
°
C
Thermal resistance junction to ambient
(a)(f)
Thermal resistance junction to ambient
(b)(f)
Thermal resistance junction to ambient
(b)(g)
Thermal resistance junction to ambient
(c)(f)
Thermal resistance junction to ambient
(d)(f)
179
°
C/W
139
°
C/W
113
°
C/W
113
°
C/W
73
°
C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ZXTC2061E6TA | 12V, SOT23-6, complementary medium power transistors |
| ZXTC2062E6 | 20V, SOT23-6, complementary medium power transistors |
| ZXTC2062E6TA | 20V, SOT23-6, complementary medium power transistors |
| ZXTC2063E6 | 40V, SOT23-6, complementary medium power transistors |
| ZXTC2063E6TA | 40V, SOT23-6, complementary medium power transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZXTC2061E6_08 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:12V, SOT23-6, complementary medium power transistors |
| ZXTC2061E6TA | 功能描述:兩極晶體管 - BJT 12V 1A Medium Power TRANSISTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZXTC2062E6 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:20V, SOT23-6, complementary medium power transistors |
| ZXTC2062E6_08 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:20V, SOT23-6, complementary medium power transistors |
| ZXTC2062E6TA | 功能描述:兩極晶體管 - BJT 20V 1A Complementary Med power transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。