參數(shù)資料
型號(hào)： ZXMN6A07F
廠商： Zetex Semiconductor
英文描述： 60V N-CHANNEL ENHANCEMENT MODE MOSFET
中文描述： 60V的N溝道增強(qiáng)型MOS管
文件頁(yè)數(shù)： 4/7頁(yè)
文件大小： 1028K
代理商： ZXMN6A07F
ZXMN6A07F
ISSUE 1 - MARCH 2002
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
60
V
ID=250
μ
A, VGS=0V
VDS=60V, VGS=0V
VGS=
±
20V, VDS=0V
ID=250
μ
A, VDS= VGS
VGS=10V, ID=1.8A
VGS=4.5V, ID=1.3A
VDS=15V,ID=1.8A
Zero Gate Voltage Drain Current
1
μ
A
nA
Gate-Body Leakage
100
Gate-Source Threshold Voltage
1.0
3.0
V
Static Drain-Source On-State
Resistance (1)
0.3
0.40
0.55
S
Forward Transconductance (3)
gfs
2.3
DYNAMIC
(3)
Input Capacitance
Ciss
Coss
Crss
166
pF
VDS=40 V, VGS=0V,
f=1MHz
Output Capacitance
19.5
pF
Reverse Transfer Capacitance
8.7
pF
SWITCHING
(2) (3)
Turn-On Delay Time
td(on)
tr
td(off)
tf
Qg
1.8
ns
VDD=30V, ID=1.8A
RG=6.0
, VGS=10V
Rise Time
1.4
ns
Turn-Off Delay Time
4.9
ns
Fall Time
2.0
ns
Gate Charge
1.65
nC
VDS=30V, VGS=5V,
ID=1.8A
Total Gate Charge
Qg
Qgs
Qgd
3.2
nC
VDS=30V,VGS=10V,
I
D
=1.8A
Gate-Source Charge
0.67
nC
Gate-Drain Charge
0.82
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
VSD
0.8
0.95
V
TJ=25°C, IS=0.45A,
VGS=0V
TJ=25°C, IF=1.8A,
di/dt= 100A/
μ
s
Reverse Recovery Time (3)
trr
Qrr
20.5
ns
Reverse Recovery Charge (3)
21.3
nC
ELECTRICAL CHARACTERISTICS
(at TA = 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width
≤
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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