參數(shù)資料
型號(hào)： ZXMN6A07F
廠商： Zetex Semiconductor
英文描述： 60V N-CHANNEL ENHANCEMENT MODE MOSFET
中文描述： 60V的N溝道增強(qiáng)型MOS管
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 1028K
代理商： ZXMN6A07F
ZXMN6A07F
ISSUE 1 - MARCH 2002
2
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDSS
VGS
ID
60
V
Gate-Source Voltage
20
V
Continuous Drain Current VGS=10V; TA=25°C(b)
VGS=10V; TA=70°C(b)
VGS=10V; TA=25°C(a)
1.0
0.84
0.93
A
Pulsed Drain Current (c)
IDM
IS
ISM
PD
4
A
Continuous Source Current (Body Diode) (b)
1
A
Pulsed Source Current (Body Diode)(c)
4
A
Power Dissipation at TA=25°C (a)
Linear Derating Factor
625
5
mW
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD
806
6.4
mW
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R
θ
JA
200
°C/W
Junction to Ambient (b)
R
θ
JA
155
°C/W
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PC, D =0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to Transient
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