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參數(shù)資料
| 型號(hào)： | ZXMN3B14F |
| 廠商： | Zetex Semiconductor |
| 英文描述： | 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE |
| 中文描述： | 30V的N溝道增強(qiáng)型MOS管2.5V的柵極驅(qū)動(dòng) |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 204K |
| 代理商： | ZXMN3B14F |
ZXMN3B14F
S E M IC O N D U C T O R S
ISSUE 1 - J UNE 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DS S
I
DS S
I
GS S
V
GS (th)
R
DS (on)
30
V
I
D
= 250 A, V
GS
=0V
V
DS
= 30V, V
GS
=0V
V
GS
=
12V, V
DS
=0V
I
D
= 250 A, V
DS
=V
GS
V
GS
= 4.5V, I
D
= 3.1A
V
GS
= 2.5V, I
D
= 2.2A
V
DS
= 15V, I
D
= 3.1A
Zero Gate Voltage Drain Current
1
A
Gate-Body Leakage
100
nA
Gate-Source Threshold Voltage
0.7
V
Static Drain-Source On-State
Resistance
(1)
0.080
0.140
Forward Transconductance
DYNAMIC
(3)
(1) (3)
g
fs
8.5
S
Input Capacitance
C
iss
C
oss
C
rss
568
pF
V
DS
= 15V, V
GS
=0V
f=1MHz
Output Capacitance
101
pF
Reverse Transfer Capacitance
SWITCHING
(2) (3)
66
pF
Turn-On-Delay Time
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
3.6
ns
V
DD
= 15V, V
GS
= 4.5V
I
D
= 1A
R
G
6.0
Rise Time
4.9
ns
Turn-Off Delay Time
17.3
ns
Fall Time
9.8
ns
Total Gate Charge
6.7
nC
V
DS
= 15V, V
GS
= 4.5V
I
D
= 3.1A
Gate-Source Charge
1.4
nC
Gate Drain Charge
1.8
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
S D
0.82
0.95
V
T
j
=25°C, I
S
= 3.1A,
V
GS
=0V
T
j
=25°C, I
F
= 1.6A,
di/dt=100A/ s
Reverse Recovery Time
(3)
Reverse Recovery Charge
(3)
t
rr
Q
rr
10.8
ns
4.54
nC
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
300 s; duty cycle
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZXMN3B14F(2) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| ZXMN3B14F_06 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE |
| ZXMN3B14FTA | 功能描述:MOSFET 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXMN3B14FTC | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE |
| ZXMN3F30FGTA | 制造商:Diodes Incorporated 功能描述: |
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