參數(shù)資料
型號(hào)： ZXMN3B14F
廠商： Zetex Semiconductor
英文描述： 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
中文描述： 30V的N溝道增強(qiáng)型MOS管2.5V的柵極驅(qū)動(dòng)
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 204K
代理商： ZXMN3B14F
ZXMN3B14F
S E M IC O N D U C T O R S
ISSUE 1 - J UNE 2005
2
PARAMETER
SYMBOL
VALUE
UNIT
J unction to Ambient
(a)
R
J A
125
°C/W
J unction to Ambient
(b)
R
J A
83
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DS S
V
GS
I
D
30
V
Gate-Source Voltage
12
V
Continuous Drain Current @ V
GS
= 4.5V; T
A
=25°C
(b)
(b)
(a)
@ V
GS
= 4.5V; T
A
=70°C
@ V
GS
= 4.5V; T
A
=25°C
3.5
2.9
2.9
A
A
A
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode)
(b)
Pulsed Source Current (Body Diode)
(c)
Power Dissipation at T
A
=25°C
(a)
Linear Derating Factor
Power Dissipation at T
A
=25°C
(b)
Linear Derating Factor
I
DM
I
S
I
S M
P
D
16
A
2.4
A
16
A
1
8
W
mW/°C
P
D
1.5
12
W
mW/°C
Operating and Storage Temperature Range
T
j
, T
stg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS
相關(guān)PDF資料
PDF描述
ZXMN3B14FTA 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXMN3B14F(2) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
ZXMN3B14F_06 制造商:ZETEX 制造商全稱:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
ZXMN3B14FTA 功能描述:MOSFET 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMN3B14FTC 制造商:ZETEX 制造商全稱:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
ZXMN3F30FGTA 制造商:Diodes Incorporated 功能描述:
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