參數(shù)資料
型號： ZXMN3A04K
廠商： Zetex Semiconductor
英文描述： 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK
中文描述： 30V的N溝道增強(qiáng)型MOSFET采用DPAK
文件頁數(shù)： 4/7頁
文件大?。?/td> 146K
代理商： ZXMN3A04K
ZXMN3A04K
S E M IC O N D U C T O R S
ISSUE 1 - FEBRUARY 2004
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-source breakdown voltage
V
(BR)DS S
30
V
I
D
= 250 A, V
GS
=0V
Zero gate voltage drain current
I
DS S
0.5
A
V
DS
= 30V, V
GS
=0V
Gate-body leakage
I
GS S
100
nA
V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage
V
GS (th)
1.0
V
I
D
= 250mA, V
DS
=V
GS
Static drain-source on-state resistance
(1)
R
DS (on)
0.02
V
GS
= 10V, I
D
= 12A
0.03
V
GS
= 4.5V, I
D
= 9.8A
Forward transconductance
(1) (3)
g
fs
22.1
S
V
DS
= 15V, I
D
= 12.6A
DYNAMIC
(3)
Input capacitance
C
iss
1890
pF
V
DS
= 15V, V
GS
=0V
f=1MHz
Output capacitance
C
oss
349
pF
Reverse transfer capacitance
C
rss
218
pF
SWITCHING
(2) (3)
Turn-on-delay time
t
d(on)
5.2
ns
V
DD
= 15V, I
D
= 1A
R
G
6.0 , V
GS
= 10V
Rise time
t
r
6.1
ns
Turn-off delay time
t
d(off)
38.1
ns
Fall time
t
f
20.2
ns
Total gate charge
Q
g
19.9
nC
V
DS
= 15V, V
GS
= 5V
I
D
= 6.5A
Total gate charge
Q
g
36.8
nC
V
DS
= 15V, V
GS
= 10V
I
D
= 6.5A
Gate-source charge
Q
gs
5.8
nC
Gate drain charge
Q
gd
7.1
nC
SOURCE-DRAIN DIODE
Diode forward voltage (1)
V
S D
0.85
0.95
V
T
j
=25°C, I
S
= 6.8A,
V
GS
=0V
Reverse recovery time (3)
t
rr
18.4
ns
T
j
=25°C, I
S
= 2.3A,
di/dt=100A/ s
Reverse recovery charge (3)
Q
rr
11
nC
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
300 s; duty cycle
2%.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXMN3A04KTC 功能描述:MOSFET N-Ch 30 Volt 18.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMN3A05N8TA 功能描述:MOSFET N-CH 30V 12A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
ZXMN3A06DN8 制造商:ZETEX 制造商全稱:ZETEX 功能描述:DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN3A06DN8_02 制造商:ZETEX 制造商全稱:ZETEX 功能描述:DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN3A06DN8TA 功能描述:MOSFET Dl 30V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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