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參數(shù)資料
| 型號： | ZXMN3A04DN8TA |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 中文描述： | 6500 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | SOIC-8 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 56K |
| 代理商： | ZXMN3A04DN8TA |
PROVISIONAL ISSUE A - AUGUST 2001
ZXMN3A04DN8
3
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX .
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DS S
30
V
I
D
=250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DS S
0.5
μ
A
V
DS
=30V, V
GS
=0V
Gate-Body Leakage
I
GS S
100
nA
V
GS
=
±
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS (th)
1.0
V
I
D
=250
μ
A, V
DS
= V
GS
Static Drain-Source On-State Resistance (1)
R
DS (on)
0.02
0.03
V
GS
=10V, I
D
=12.6A
V
GS
=4.5V, I
D
=10.6A
Forward Transconductance (3)
g
fs
17.5
S
V
DS
=15V,I
D
=6A
DYNAMIC
(3)
Input Capacitance
C
iss
1800
pF
V
=25V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
289
pF
Reverse Transfer Capacitance
C
rss
178
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
5.5
ns
V
DD
=15V, I
D
=6A
R
G
=6.0
, V
GS
=10V
Rise Time
t
r
8.7
ns
Turn-Off Delay Time
t
d(off)
33
ns
Fall Time
t
f
8.5
ns
Gate Charge
Q
g
19.4
nC
V
DS
=15V,V
GS
=5V,
I
D
=3.5A
Total Gate Charge
Q
g
35.7
nC
V
DS
=15V,V
GS
=10V,
I
D
=3.5A
Gate-Source Charge
Q
gs
5.5
nC
Gate-Drain Charge
Q
gd
7.0
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
S D
0.95
V
T
J
=25°C, I
S
=6A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
20.5
ns
T
=25°C, I
=6A,
di/dt= 100A/
μ
s
Reverse Recovery Charge (3)
Q
rr
41.5
nC
NOTES
(1) Measured under pulsed conditions. Width
=
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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| ZXMN3A04DN8TC | 功能描述:MOSFET Dl 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXMN3A04K | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK |
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| ZXMN3A05N8TA | 功能描述:MOSFET N-CH 30V 12A 8-SOIC RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| ZXMN3A06DN8 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET |
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