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參數(shù)資料
| 型號： | ZXMN3A04DN8TA |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 中文描述： | 6500 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | SOIC-8 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 56K |
| 代理商： | ZXMN3A04DN8TA |
PROVISIONAL ISSUE A - AUGUST 2001
ZXMN3A04DN8
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DS S
V
GS
I
D
30
V
Gate Source Voltage
20
V
Continuous Drain Current (V
GS
=10V; T
A
=25°C)(b)(d)
(V
GS
=10V; T
A
=70°C)(b)(d)
(V
GS
=10V; T
A
=25°C)(a)(d)
7.6
6.0
5.8
A
Pulsed Drain Current (c)
I
DM
I
S
I
S M
P
D
25
A
Continuous Source Current (Body Diode) (b)
2.5
A
Pulsed Source Current (Body Diode)(c)
25
A
Power Dissipation at T
A
=25°C (a)(d)
Linear Derating Factor
1.25
10
W
mW/°C
Power Dissipation at T
A
=25°C (a)(e)
Linear Derating Factor
P
D
1.8
14
W
mW/°C
Power Dissipation at T
A
=25°C (b)(d)
Linear Derating Factor
P
D
2.1
17
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
J unction to Ambient (a)(d)
R
θ
J A
100
°C/W
J unction to Ambient (a)(e)
R
θ
J A
70
°C/W
J unction to Ambient (b)(d)
R
θ
J A
60
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10μs - pulse width limited by maximum
junction temperature. Refer to Transcient Thermal Inpedance graph.
(d) For device with one active die
(e) For device with two active die running at equal power.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZXMN3A04DN8TC | 功能描述:MOSFET Dl 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXMN3A04K | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK |
| ZXMN3A04KTC | 功能描述:MOSFET N-Ch 30 Volt 18.4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXMN3A05N8TA | 功能描述:MOSFET N-CH 30V 12A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| ZXMN3A06DN8 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET |
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