參數(shù)資料
型號(hào)： ZXMN10A09K
廠商： Zetex Semiconductor
英文描述： 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK
中文描述： 100V的N溝道增強(qiáng)型MOSFET采用DPAK
文件頁數(shù)： 4/7頁
文件大?。?/td> 197K
代理商： ZXMN10A09K
ZXMN10A09K
S E M IC O N D U C T O R S
ISSUE 6 - J ANUARY 2005
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-source breakdown voltage
V
(BR)DS S
100
V
I
D
= 250 A, V
GS
=0V
Zero gate voltage drain current
I
DS S
1
A
V
DS
= 100V, V
GS
=0V
Gate-body leakage
I
GS S
100
nA
V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage
V
GS (th)
2.0
4.0
V
I
D
=250 A, V
DS
=V
GS
Static drain-source on-state resistance
(1)
R
DS (on)
0.085
V
GS
= 10V, I
D
= 4.6A
0.100
V
GS
= 6V, I
D
= 4.2A
Forward transconductance
(1) (3)
g
fs
10.7
S
V
DS
= 15V, I
D
= 4.6A
DYNAMIC
(3)
Input capacitance
C
iss
1313
pF
V
DS
= 50V, V
GS
=0V
f=1MHz
Output capacitance
C
oss
83
pF
Reverse transfer capacitance
C
rss
56
pF
SWITCHING
(2) (3)
Turn-on-delay time
t
d(on)
6.8
ns
V
DD
= 50V, I
D
= 1A
R
G
6.0 , V
GS
= 10V
Rise time
t
r
5.3
ns
Turn-off delay time
t
d(off)
27.5
ns
Fall time
t
f
12.3
ns
Total gate charge
Q
g
17.2
nC
V
DS
= 50V, V
GS
= 6V
I
D
= 4.6A
Total gate charge
Q
g
26
nC
V
DS
= 50V, V
GS
= 10V
I
D
= 4.6A
Gate-source charge
Q
gs
5.6
nC
Gate drain charge
Q
gd
7.6
nC
SOURCE-DRAIN DIODE
Diode forward voltage
(1)
V
S D
0.85
0.95
V
T
j
=25°C, I
F
= 4.7A,
V
GS
=0V
Reverse recovery time
(3)
t
rr
40
ns
T
j
=25°C, I
S
= 3A,
di/dt=100A/ s
Reverse recovery charge
(3)
Q
rr
62
nC
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
300 s; duty cycle
2%.
相關(guān)PDF資料
PDF描述
ZXMN10A09KTC Circular Connector; Gender:Female; No. of Contacts:6; Series:Mini-Con-X; Body Material:Nylon; Connecting Termination:Solder Cup; Connector Shell Size:20; Leaded Process Compatible:Yes; Operating Voltage:600V RoHS Compliant: Yes
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXMN10A09KTC 功能描述:MOSFET MOSFET N-CH 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMN10A11G 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-223 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-223 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 100V, 2.4A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes
ZXMN10A11G 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-223
ZXMN10A11G_04 制造商:ZETEX 制造商全稱:ZETEX 功能描述:100V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN10A11GFTA 制造商:ZETEX 制造商全稱:ZETEX 功能描述:100V N-CHANNEL ENHANCEMENT MODE MOSFET
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