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參數(shù)資料
| 型號： | ZXMHC6A07T8 |
| 廠商： | Zetex Semiconductor |
| 英文描述： | COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE |
| 中文描述： | 互補(bǔ)60V的增強(qiáng)型MOSFET的H橋 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 286K |
| 代理商： | ZXMHC6A07T8 |
ZXMHC6A07T8
ISSUE 1 - J ULY 2004
S E M IC O N D U C T O R S
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX .
UNIT
CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DS S
60
V
I
D
=250μA, V
GS
=0V
Zero Gate Voltage Drain Current
I
DS S
1
μA
V
DS
=60V, V
GS
=0V
Gate-Body Leakage
I
GS S
100
nA
V
GS
=±20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS (th)
1
3.0
V
I
D
=250μA, V
DS
= V
GS
V
GS
=10V, I
D
=1.8A
V
GS
=4.5V, I
D
=1.3A
Static Drain-Source On-State Resistance
(1)
R
DS (on)
0.300
0.450
Forward Transconductance
(1)(3)
g
fs
2.3
S
V
DS
=15V,I
D
=1.8A
DYNAMIC
(3)
Input Capacitance
C
iss
166
pF
V
=40V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
19.5
pF
Reverse Transfer Capacitance
C
rss
8.7
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
1.8
ns
V
DD
=30V, I
D
=1.8A
R
G
6.0
, V
GS
=10V
Rise Time
t
r
1.4
ns
Turn-Off Delay Time
t
d(off)
4.9
ns
Fall Time
t
f
2.0
ns
Gate Charge
Q
g
1.65
nC
V
DS
=30V,V
GS
=5V,
I
D
=1.8A
Total Gate Charge
Q
g
3.2
nC
V
DS
=30V,V
GS
=10V,
I
D
=1.8A
Gate-Source Charge
Q
gs
0.67
nC
Gate-Drain Charge
Q
gd
0.82
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
S D
0.85
0.95
V
T
J
=25°C, I
S
=0.45A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
20.5
ns
T
=25°C, I
=1.8A,
di/dt= 100A/μs
Reverse Recovery Charge
(3)
Q
rr
21.3
nC
N-CHANNEL
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width
≤
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZXMHC6A07T8(1) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| ZXMHC6A07T8(2) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| ZXMHC6A07T8_05 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE |
| ZXMHC6A07T8TA | 功能描述:MOSFET 60V UMOS H-Bridge RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZXMHC6A07T8TC | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE |
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