參數(shù)資料
型號(hào): ZXMHC6A07T8
廠商: Zetex Semiconductor
英文描述: COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE
中文描述: 互補(bǔ)60V的增強(qiáng)型MOSFET的H橋
文件頁(yè)數(shù): 2/10頁(yè)
文件大小: 286K
代理商: ZXMHC6A07T8
ZXMHC6A07T8
ISSUE 1 - J ULY 2004
2
S E M IC O N D U C T O R S
PARAMETER
SYMBOL
VALUE
UNIT
J unction to Ambient
(a)(d)
R
θ
J A
96
°C/W
J unction to Ambient
(b)(d)
R
θ
J A
73
°C/W
THERMAL RESISTANCE
Notes
(a) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured 1.6mm at t
10sec.
(c) Repetitive rating - 50mm x 50mm x 1.6mm FR4 PCB, D = 0.2, pulse width 300 S pulse width limited by maximum junction temperature. Refer
to Transient Thermal Impedance graph.
(d) For device with one active die.
PARAMETER
SYMBOL
N-Channel
P-Channel
UNIT
Drain-Source Voltage
V
DS S
60
-60
V
Gate-Source Voltage
V
GS
20
20
V
Continuous Drain Current@V
GS
=10V; T
A
=25 C
(b)(d)
@V
GS
=10V; T
A
=70 C
(b)(d)
@V
GS
=10V; T
A
=25 C
(a)(d)
I
D
1.8
1.4
1.6
-1.5
-1.2
-1.3
A
A
Pulsed Drain Current
(c)
I
DM
8.7
-7.5
A
Continuous Source Current (Body Diode)
(b)
I
S
2.3
-2.1
A
Pulsed Source Current (Body Diode)
(c)
I
S M
8.7
-7.5
A
Power Dissipation at T
A
=25°C
(a)(d)
Linear Derating Factor
P
D
1.3
10.4
W
mW/°C
Power Dissipation at T
A
=25°C
(b)(d)
Linear Derating Factor
P
D
1.7
13.6
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS
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ZXMHC6A07T8_05 制造商:ZETEX 制造商全稱:ZETEX 功能描述:COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE
ZXMHC6A07T8TA 功能描述:MOSFET 60V UMOS H-Bridge RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMHC6A07T8TC 制造商:ZETEX 制造商全稱:ZETEX 功能描述:COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE