參數(shù)資料
型號： ZXMD63C03XTC
廠商： ZETEX PLC
元件分類： 小信號晶體管
英文描述： 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET
中文描述： 2300 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-187AA
封裝： MSOP-8
文件頁數(shù)： 8/11頁
文件大?。?/td> 283K
代理商： ZXMD63C03XTC
ZXMD63C03X
20
P-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
-30
V
I
D
=-250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
-1
μ
A
V
DS
=-30V, V
GS
=0V
Gate-Body Leakage
I
GSS
±
100
nA
V
GS
=
±
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
-1.0
V
I
D
=-250
μ
A, V
DS
=V
GS
Static Drain-Source On-State
Resistance (1)
R
DS(on)
0.185
0.27
V
GS
=-10V, I
D
=-1.2A
V
GS
=-4.5V, I
D
=-0.6A
Forward Transconductance (3)
g
fs
0.92
S
V
DS
=-10V,I
D
=-0.6A
DYNAMIC (3)
Input Capacitance
C
iss
270
pF
V
=-25 V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
80
pF
Reverse Transfer Capacitance
C
rss
30
pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
2.6
ns
V
DD
=-15V, I
D
=-2.4A
R
=6.2
, R
=6.2
(Refer to test
circuit)
Rise Time
t
r
4.8
ns
Turn-Off Delay Time
t
d(off)
13.1
ns
Fall Time
t
f
9.3
ns
Total Gate Charge
Q
g
7
nC
V
DS
=-24V,V
GS
=-10V,
I
=-1.2A
(Refer to test
circuit)
Gate-Source Charge
Q
gs
1.2
nC
Gate Drain Charge
Q
gd
2
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
-0.95
V
T
j
=25°C, I
S
=-1.2A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
21.4
ns
T
=25°C, I
=-1.2A,
di/dt= 100A/
μ
s
Reverse Recovery Charge(3)
Q
rr
15.7
nC
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - JUNE 1999
相關(guān)PDF資料
PDF描述
ZXMD63N02 DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63N02X DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63N02XTA DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63N02XTC DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63N03X DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXMD63N02 制造商:ZETEX 制造商全稱:ZETEX 功能描述:DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63N02X 制造商:Diodes Incorporated 功能描述:MOSFET DUAL NN MSOP8 制造商:Diodes Incorporated 功能描述:MOSFET, DUAL, NN, MSOP8 制造商:DIODES 功能描述:MOSFET, DUAL, NN, MSOP8, Transistor Polarity:N Channel, Continuous Drain Current 制造商:Diodes Incorporated 功能描述:MOSFET, DUAL, NN, MSOP8, Transistor Polarity:N Channel, Continuous Drain Current 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, DUAL, 20V, 2.4A, MSOP, Transistor Polarity:N Channel, Continuous Drain Current Id:2.4A, Drain Source Voltage Vds:20V, On Resistance Rds(on):130mohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:700mV , RoHS Compliant: Yes
ZXMD63N02X 制造商:Diodes Incorporated 功能描述:MOSFET DUAL NN MSOP8
ZXMD63N02XTA 功能描述:MOSFET Dual 20V N Chl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMD63N02XTC 功能描述:MOSFET Dual 20V N Chl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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