參數(shù)資料
型號： ZXMD63C03XTC
廠商： ZETEX PLC
元件分類： 小信號晶體管
英文描述： 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET
中文描述： 2300 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-187AA
封裝： MSOP-8
文件頁數(shù)： 2/11頁
文件大?。?/td> 283K
代理商： ZXMD63C03XTC
14
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
R
θ
JA
143
°C/W
Junction to Ambient (b)(d)
R
θ
JA
100
°C/W
Junction to Ambient (a)(e)
R
θ
JA
120
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t
<
10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
N-CHANNEL
P-CHANNEL
UNIT
Drain-Source Voltage
V
DSS
V
GS
I
D
30
-30
V
Gate- Source Voltage
±
20
V
Continuous Drain Current (V
GS
=4.5V; T
A
=25°C)(b)(d)
(V
GS
=4.5V; T
A
=70°C)(b)(d)
Pulsed Drain Current (c)(d)
2.3
1.8
-2.0
-1.6
A
I
DM
I
S
I
SM
P
D
14
-9.6
A
Continuous Source Current (Body Diode)(b)(d)
1.5
-1.4
A
Pulsed Source Current (Body Diode)(c)(d)
14
-9.6
A
Power Dissipation at T
A
=25°C (a)(d)
Linear Derating Factor
0.87
6.9
W
mW/°C
Power Dissipation at T
A
=25°C (a)(e)
Linear Derating Factor
P
D
1.04
8.3
W
mW/°C
Power Dissipation at T
A
=25°C (b)(d)
Linear Derating Factor
P
D
1.25
10
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ZXMD63C03X
PROVISIONAL ISSUE A - JUNE 1999
相關(guān)PDF資料
PDF描述
ZXMD63N02 DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63N02X DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63N02XTA DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63N02XTC DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63N03X DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZXMD63N02 制造商:ZETEX 制造商全稱:ZETEX 功能描述:DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMD63N02X 制造商:Diodes Incorporated 功能描述:MOSFET DUAL NN MSOP8 制造商:Diodes Incorporated 功能描述:MOSFET, DUAL, NN, MSOP8 制造商:DIODES 功能描述:MOSFET, DUAL, NN, MSOP8, Transistor Polarity:N Channel, Continuous Drain Current 制造商:Diodes Incorporated 功能描述:MOSFET, DUAL, NN, MSOP8, Transistor Polarity:N Channel, Continuous Drain Current 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, DUAL, 20V, 2.4A, MSOP, Transistor Polarity:N Channel, Continuous Drain Current Id:2.4A, Drain Source Voltage Vds:20V, On Resistance Rds(on):130mohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:700mV , RoHS Compliant: Yes
ZXMD63N02X 制造商:Diodes Incorporated 功能描述:MOSFET DUAL NN MSOP8
ZXMD63N02XTA 功能描述:MOSFET Dual 20V N Chl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZXMD63N02XTC 功能描述:MOSFET Dual 20V N Chl HDMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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