參數(shù)資料
型號(hào)： ZXMC6A09DN8TC
廠商： ZETEX PLC
元件分類： JFETs
英文描述： COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
中文描述： 5.1 A, 60 V, 0.045 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁數(shù)： 4/10頁
文件大?。?/td> 290K
代理商： ZXMC6A09DN8TC
ZXMC6A09DN8
ISSUE 3 - AUGUST 2004
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX .
UNIT
CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
(BR)DS S
60
V
I
D
=250
μ
A, V
GS
=0V
Zero Gate Voltage Drain Current
I
DS S
1.0
A
V
DS
=60V, V
GS
=0V
Gate-Body Leakage
I
GS S
100
nA
V
GS
=
20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS (th)
1.0
V
I
D
=250 A, V
DS
= V
GS
V
GS
=10V, I
D
=8.2A
V
GS
=4.5V, I
D
=7.4A
Static Drain-Source On-State Resistance
(1)
R
DS (on)
0.045
0.070
Forward Transconductance
(1)(3)
g
fs
15
S
V
DS
=15V,I
D
=8.2A
DYNAMIC
(3)
Input Capacitance
C
iss
1407
pF
V
=40V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
121
pF
Reverse Transfer Capacitance
C
rss
59
pF
SWITCHING
(2) (3)
Turn-On Delay Time
t
d(on)
4.9
ns
V
DD
=30V, I
D
=1.0A
R
G
6.0
, V
GS
=10V
Rise Time
t
r
3.3
ns
Turn-Off Delay Time
t
d(off)
28.5
ns
Fall Time
t
f
11.0
ns
Gate Charge
Q
g
12.4
nC
V
DS
=15V,V
GS
=5V,
I
D
=3.5A
Total Gate Charge
Q
g
24.2
nC
V
DS
=15V,V
GS
=10V,
I
D
=3.5A
Gate-Source Charge
Q
gs
5.2
nC
Gate-Drain Charge
Q
gd
3.5
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
S D
0.85
0.95
V
T
J
=25°C, I
S
=6.6A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
26.3
ns
T
=25°C, I
=3.5A,
di/dt= 100A/ s
Reverse Recovery Charge
(3)
Q
rr
26.6
nC
N-CHANNEL
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width
≤
300
μ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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